In nano-scaled devices, several quantum effects must be taken into consideration. The peculiarities of subband structures determine the carrier transport, and finally their macroscopic behavior. Electrons in any semiconductor experience the periodic potential of the crystal lattice. This periodic potential causes the formation of energy bands. The electronic band structure of a semiconductor describes the energy states that an electron and a hole are either allowed or forbidden to occupy. The analysis of the subband energies of an electron (En, n being the band index) with the presented calculation methods, and their dependence on the wave vector (k) is thus paramount.