D I S S E R T A T I O N

Modeling Spin-Dependent
Transport in Silicon

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
von

Joydeep Ghosh

Theodor-Kramer Str. 10/2/23
A-1220 Wien, Österreich

geboren am 16. September 1982 in Kolkata, Indien

Wien, im März 2016      

Kurzfassung
Abstract
Acknowledgement
List of Symbols
List of Constants
List of Figures
List of Tables
1 Introduction
 1.1 Spintronics: Historical Background
 1.2 Silicon Spintronics
 1.3 Spin Relaxation in Silicon
 1.4 Spin Injection into Silicon
 1.5 Outline of the Thesis
2 Electronic Band Structure
 2.1 Band Structure Calculation Methods in Semiconductors
 2.2 Spin-Orbit Coupling
 2.3 Spin Relaxation in Semiconductors
3 k ⋅ p Hamiltonian and Subband Wave Functions
 3.1 Silicon Lattice
 3.2 Effect of Strain on Silicon Band Structure
 3.3 Two-Band k ⋅ p Hamiltonian of [001] Valley at the X-Point
 3.4 Wave Functions: Analytical Form
 3.5 Valley Splitting by Shear Strain
4 Spin Relaxation
 4.1 Spin Relaxation Matrix Elements
 4.2 Spin Hot Spots and Spin Precession
 4.3 Calculation of the Spin Relaxation Rates
 4.4 Spin Lifetime Simulations
 4.5 Momentum Relaxation Time Simulations
 4.6 Valley Splitting in Unstrained Films
 4.7 Primed Subbands and f-Processes
5 Spin Diffusion in Silicon
 5.1 Semi-Classical Model of Charge Transport
 5.2 Spin Transport Equations
 5.3 Solution
 5.4 Spin Diffusion from a Space-Charge Layer
6 Summary and Outlook
Bibliography
Own Publications
Biography

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