1.1 Definition of NBTI
1.2 Two Main Contributions to NBTI
1.3 NBTI Experiments
1.3.1 Measure-Stress-Measure Technique
1.3.2 On-The-Fly Measurements
1.3.3 Electron Spin Resonance
1.3.4 Time Dependent Defect Spectroscopy
1.4 Phenomenological Findings
1.5 A Modeling Perspective
1.5.1 Reaction-Diffusion Model
1.5.2 Dispersive Transport
1.5.3 Reaction-Limited Models
1.5.4 Triple-Well Model
1.5.5 Combined Models
1.6 Conclusion
2 Fundamentals of Charge Trapping
2.1 Tunneling — A Process Depending on Device Electrostatics
2.2 Franck-Condon Theory
2.3 The Level Shift
2.4 Nonradiative Multi-Phonon Theory
2.5 Effective Rates into Single Traps
2.5.1 Elastic Electron Tunneling
2.5.2 Shockley-Read-Hall Theory
3 Applied Methods
3.1 Schrödinger-Poisson Solver
3.2 From Rates to Degradation Curves
3.3 Density Functional Theory
3.3.1 Introduction
3.3.2 The Basic Concepts of DFT
3.3.3 Simulation Details
3.4 Empirical Potential Molecular Dynamics
3.4.1 Fundamentals of Molecular Dynamics
3.4.2 Procedure for Structure Generation
4 Elastic Tunneling Model
4.1 A Phenomenological Trapping Model
4.2 Elastic Tunneling
4.2.1 The Behavior of A Single Trap
4.2.2 Spatially and Energetically Distributed Traps
4.2.3 Time Behavior during Stress
4.2.4 Time Range of Trapping
4.2.5 Oxide Field Dependence
4.2.6 Time Behavior during Relaxation
4.2.7 Investigation of the Temperature Dependence using a Quantum Refinement
4.2.8 Charge Injection from the Gate
4.2.9 Width of the Trap Band
4.3 Conclusion
5 Level Shift Model
5.1 Defects in Amorphous Silicon Dioxide
5.1.1 Oxygen Vacancy
5.1.2
Center and Variants
5.1.3 Hydrogen Atom
5.1.4 Hydrogen Bridge
5.2 The Level Shift Model
5.2.1 Model Evaluation
5.3 Conclusion
6 SRH-Based Models
6.1 McWhorter Model
6.2 Standard Model of Kirton and Uren
6.3 Two Stage Model
6.3.1 Physical Description of the Model
6.3.2 Model Evaluation
6.3.3 Quantum Mechanical Simulations
6.3.4 Capture and Emission Time Constants
6.4 Conclusion
7 The Extended Nonradiative Multi-Phonon Model
7.1 Transition Rates according to the NMP Theory
7.2 States of a Bistable Defect
7.3 Model Evaluation
7.4 Analytics Derivation of the Capture and Emission Time Constants
7.5 Explanation for Noise in TDDS Measurements
7.6 Discussion
7.7 Conclusion
8 Conclusion and Outlook
A Physical Basics
A.1 Fermi’s Golden Rule
A.2 Wenzel-Kramers-Brillouin Method
A.3 WKB Formulas for Different Shapes of Energy Barriers
A.4 Density of States