[1]   W. Goes, F. Schanovsky, H. Reisinger, B. Kaczer, and T. Grasser, “Bistable Defects as the Cause for NBTI and RTN,” Solid State Phenomena, vol. 178-179, pp. 473–482, 2011.

[2]   W. Goes, F. Schanovsky, H. Reisinger, B. Kaczer, and T. Grasser, “Bistable Defects as the Cause for NBTI and RTN,” in Gettering and Defect Engineering in Semiconductor Technology (GADEST) 2011: Abstract Booklet, p. 153, 2011.

[3]   T. Grasser, B. Kaczer, W. Goes, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, and M. Nelhiebel, “The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps,” IEEE Transactions on Electron Devices, 2011, (invited).

[4]   P. Hehenberger, W. Goes, O. Baumgartner, J. Franco, B. Kaczer, and T. Grasser, “Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs,” in Proceedings of the 15^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 11–14, 2011. Talk: SISPAD, Osaka, Japan; 2011-09-08 – 2011-09-10.

[5]   W. Goes, F. Schanovsky, T. Grasser, H. Reisinger, and B. Kaczer, “Advanced Modeling of Oxide Defects for Random Telegraph Noise,” in Proceedings of the 21^st International Conference on Noise and Fluctuations (ICNF), 2011. Talk: ICNF, Toronto, Canada; 2011-06-12 – 2011-06-16.

[6]   F. Schanovsky, W. Goes, and T. Grasser, “Multiphonon Hole Trapping from First Principles,” Journal of Vacuum Science & Technology B, vol. 29, no. 1, pp. 01A201–1–01A201–5, 2011.

[7]   T. Grasser, B. Kaczer, W. Goes, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, P. J. Roussel, and M. Nelhiebel, “Recent Advances in Understanding the Bias Temperature Instability,” in Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM), pp. 82–85, 2010. Talk: IEDM, San Francisco (invited); 2010-12-06 – 2010-12-08.

[8]   F. Schanovsky, W. Goes, and T. Grasser, “Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping,” in Proceedings of the 14^th International Workshop on Computational Electronics (IWCE), pp. 163–166, 2010. Talk: IWCE, Pisa; 2010-10-26 – 2010-10-29.

[9]   T. Grasser, H. Reisinger, P.-J. Wagner, W. Goes, F. Schanovsky, and B. Kaczer, “The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.” Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta (invited); 2010-10-11, 2010.

[10]   W. Goes, F. Schanovsky, P. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge Trapping and the Negative Bias Temperature Instability,” in Meet. Abstr. - Electrochem. Soc. 2010, 2010. Talk: 218^th ECS Meeting, Las Vegas, USA; 2010-10-10 – 2010-10-15.

[11]   W. Goes, F. Schanovsky, P. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge Trapping and the Negative Bias Temperature Instability,” in Physics and Technology of High-k Materials 8, pp. 565–589, ECS Transactions, 2010, (invited).

[12]   F. Schanovsky, W. Goes, and T. Grasser, “An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT,” Journal of Computational Electronics, vol. 9, no. 3-4, pp. 135–140, 2010, (invited).

[13]   F. Schanovsky, W. Goes, and T. Grasser, “Hole Capture into Oxide Defects in MOS Structures from First Principles,” in Abstract Book, p. 435, 2010. Poster: - 2010 Conference, Berlin; 2010-09-12 – 2010-09-16.

[14]   F. Schanovsky, W. Goes, and T. Grasser, “Mulit-Phonon Hole-Trapping from First-Principles,” in Book of Abstracts, p. 54, 2010. Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 – 2010-06-30.

[15]   T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, and W. Goes, “The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability,” in Proceedings of the International Reliability Physics Symposium (IRPS), pp. 16–25, 2010. Talk: IRPS, Anaheim; 2010-05-02 – 2010-05-06.

[16]   T. Grasser, B. Kaczer, W. Goes, T. Aichinger, P. Hehenberger, and M. Nelhiebel, “Understanding Negative Bias Temperature Instability in the Context of Hole Trapping,” Microelectronic Engineering, vol. 86, no. 7-9, pp. 1876–1882, 2009, (invited).

[17]   T. Grasser, H. Reisinger, W. Goes, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, and B. Kaczer, “Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise,” in Proceedings of the International Electron Devices Meeting (IEDM), 2009. Talk: IEDM, Baltimore; 2009-12-07 – 2009-12-09.

[18]   T. Grasser, W. Goes, and B. Kaczer, “Critical Modeling Issues in Negative Bias Temperature Instability,” in 215^th ECS Meeting (R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, and A. Toriumi, eds.), pp. 265–287, ECS Transactions, 2009, (invited).

[19]   B. Bindu, W. Goes, B. Kaczer, and T. Grasser, “Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress,” in 2009 IEEE International Integrated Reliability Workshop Final Report(IIRW), pp. 93–96, 2009. Talk: IIRW, S. Lake Tahoe; 2009-10-18 – 2009-10-22.

[20]   W. Goes, T. Grasser, M. Karner, and B. Kaczer, “A Model for Switching Traps in Amorphous Oxides,” in Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 159–162, 2009. Talk: SISPAD, San Diego; 2009-09-09 – 2009-09-11.

[21]   S. Tyaginov, V. Sverdlov, W. Goes, and T. Grasser, “Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate,” in Proceedings of the 20^th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2009. Talk: ESREF, Bordeaux; 2009-10-05 – 2009-10-09.

[22]   S. Tyaginov, V. Sverdlov, W. Goes, and T. Grasser, “Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations,” in 13^th International Workshop on Computational Electronics (IWCE), pp. 29–32, 2009. Talk: IWCE, Beijing; 2009-05-27 – 2009-05-29.

[23]   T. Grasser, B. Kaczer, W. Goes, T. Aichinger, P. Hehenberger, and M. Nelhiebel, “A Two-Stage Model for Negative Bias Temperature Instability,” in 2009 IEEE International Reliability Physics Symposium Proceedings (IRPS), pp. 33–44, 2009. Talk: IRPS, Montreal; 2009-04-26 – 2009-04-30.

[24]    S. Tyaginov, W. Goes, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, and F. Stimpfl, “Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal,” in 2009 IEEE International Reliability Physics Symposium Proceedings (IRPS), pp. 514–522, 2009. Talk: IRPS, Montreal; 2009-04-26 – 2009-04-30.

[25]   P. Hehenberger, T. Aichinger, T. Grasser, W. Goes, O. Triebl, B. Kaczer, and M. Nelhiebel, “Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique,” in 2009 IEEE International Reliability Physics Symposium Proceedings (IRPS), pp. 1033–1038, 2009. Poster: IRPS, Montreal; 2009-04-26 – 2009-04-30.

[26]   S. Tyaginov, V. Sverdlov, W. Goes, P. Schwaha, R. Heinzl, F. Stimpfl, and T. Grasser, “Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics,” in Proceedings of the 2009 Materials Research Society (MRS) Spring Meeting, 2009. Talk: MRS, San Francisco; 2009-04-13 – 2009-04-17.

[27]    S. Tyaginov, V. Sverdlov, W. Goes, P. Schwaha, R. Heinzl, F. Stimpfl, and T. Grasser, “Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal,” in Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference (CSTIC), p. 84, 2009. Talk: CSTIC, Shanghai; 2009-03-19 – 2009-03-20.

[28]   T. Grasser, W. Goes, and B. Kaczer, “Towards Engineering Modeling of Negative Bias Temperature Instability,” in Defects in Microelectronic Materials and Devices, pp. 399–436, Taylor and Francis/CRC Press, 2008, (invited).

[29]   T. Grasser, P.-J. Wagner, P. Hehenberger, W. Goes, and B. Kaczer, “A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability,” IEEE Transactions on Device and Materials Reliability, vol. 8, no. 3, pp. 526–535, 2008.

[30]   T. Grasser, B. Kaczer, T. Aichinger, W. Goes, and M. Nelhiebel, “Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO, SiON, and High-k Gate Stacks,” in 2008 IEEE International Integrated Reliability Workshop Final Report (IIRW), pp. 91–95, 2008. Talk: IIRW, Fallen Leaf Lake; 2008-10-18 – 2008-10-22.

[31]   W. Goes, M. Karner, V. Sverdlov, and T. Grasser, “Charging and Discharging of Oxide Defects in Reliability Issues,” IEEE Transactions on Device and Materials Reliability, vol. 8, no. 3, pp. 491–500, 2008.

[32]   T. Grasser, B. Kaczer, and W. Goes, “An Energy-Level Perspective of Bias Temperature Instability,” in Proceedings of the 19^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2008. Talk: ESREF, Maastricht (invited); 2008-09-29 – 2008-10-02.

[33]   S. E. Ungersböck, W. Goes, S. Dhar, H. Kosina, and S. Selberherr, “The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon,” Mathematics and Computers in Simulation, vol. 79, no. 4, pp. 1071–1077, 2008.

[34]   T. Grasser, W. Goes, and B. Kaczer, “Modeling Bias Temperature Instability During Stress and Recovery,” in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2008, pp. 65–68, 2008. Talk: SISPAD, Hakone; 2008-09-09 – 2008-09-11.

[35]   W. Goes, M. Karner, S. Tyaginov, P. Hehenberger, and T. Grasser, “Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping,” in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2008, pp. 69–72, 2008. Talk: SISPAD, Hakone; 2008-09-09 – 2008-09-11.

[36]   W. Goes, M. Karner, V. Sverdlov, and T. Grasser, “A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics,” in Proceedings 15^th International Symposium on the Physical and Failure Analysis (IPFA) of Integrated Circuits, pp. 249–254, 2008. Talk: IPFA, Singapore; 2008-07-07 – 2008-07-11.

[37]   T. Grasser, W. Goes, and B. Kaczer, “Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models,” IEEE Transactions on Device and Materials Reliability, vol. 8, no. 1, pp. 79–97, 2008, (invited).

[38]   T. Grasser, B. Kaczer, and W. Goes, “An Energy-Level Perspective of Bias Temperature Instability,” in Proceedings of the International Reliability Physics Symposium (IRPS), pp. 28–38, 2008. Talk: IRPS, Phoenix; 2008-04-27 – 2008-05-01.

[39]   T. Grasser, B. Kaczer, P. Hehenberger, W. Goes, R. Connor, H. Reisinger, W. Gustin, and C. Schlünder, “Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability,” in International Electron Devices Meeting (IEDM) 2007, pp. 801–804, 2007. Talk: IEDM, Washington, DC; 2007-12-10 – 2007-12-12.

[40]   M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Goes, M. Vasicek, O. Baumgartner, C. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, and S. Selberherr, “A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications,” Journal of Computational Electronics, vol. 6, no. 1-3, pp. 179–182, 2007.

[41]   T. Grasser, P.-J. Wagner, P. Hehenberger, W. Goes, and B. Kaczer, “A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability,” in 2007 IEEE International Integrated Reliability Workshop (IIRW) Final Report, pp. 6–11, 2007. Talk: IIRW, Fallen Leaf Lake; 2007-10-15 – 2007-10-18.

[42]   W. Goes and T. Grasser, “Charging and Discharging of Oxide Defects in Reliability Issues,” in 2007 IEEE International Integrated Reliability Workshop (IIRW) Final Report, pp. 27–32, 2007. Talk: IIRW, Fallen Leaf Lake; 2007-10-15 – 2007-10-18.

[43]   M. Karner, S. Holzer, W. Goes, M. Vasicek, M. Wagner, H. Kosina, and S. Selberherr, “Numerical Analysis of Gate Stacks,” in Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3, pp. 299–308, ECS Transactions, 2006.

[44]   M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Goes, M. Vasicek, T. Grasser, H. Kosina, and S. Selberherr, “VSP- A Gate Stack Analyzer,” Microelectronics Reliability, vol. 47, no. 4-5, pp. 704–708, 2007.

[45]   W. Goes and T. Grasser, “First-Principles Investigation on Oxide Trapping,” in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2007 (T. Grasser and S. Selberherr, eds.), (12), pp. 157–160, Springer-Verlag Wien New York, 2007. Talk: SISPAD, Wien; 2007-09-25 – 2007-09-27.

[46]   T. Grasser, W. Goes, V. Sverdlov, and B. Kaczer, “The Universality of NBTI Relaxation and its Implications for Modeling and Characterization,” in 45^th Annual International Reliability Physics Symposium (IRPS), pp. 268–280, 2007. Talk: IRPS, Phoenix; 2007-04-15 – 2007-04-19.

[47]   M. Karner, S. Holzer, M. Vasicek, W. Goes, M. Wagner, H. Kosina, and S. Selberherr, “Numerical Analysis of Gate Stacks,” in Meeting Abstracts 2006 Joint International Meeting, 2006. Talk: Meeting of the Electrochemical Society (ECS), Cancun; 2006-10-29 – 2006-11-03.

[48]   T. Grasser, W. Goes, and B. Kaczer, “Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability,” in 2006 IEEE International Integrated Reliability Workshop (IIRW) Final Report, pp. 5–10, 2006. Talk: IIRW, S. Lake Tahoe; 2006-10-16 – 2006-10-19.

[49]   M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Goes, M. Vasicek, T. Grasser, H. Kosina, and S. Selberherr, “VSP-A Gate Stack Analyzer,” in WODIM 2006 14^th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (WODIM), pp. 101–102, 2006. Talk: WODIM, Catania; 2006-06-26 – 2006-06-28.

[50]   S. Tyaginov, V. Sverdlov, I. Starkov, W. Goes, and T. Grasser, “Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate,” Microelectronics Reliability, vol. 49, pp. 998–1002, 2009.