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After reaching a maximum at about
, the drain current decreases
considerably. This negative differential output conductance is predicted by two different
device simulators. Fig. 4.5 shows the results obtained from our device
simulator MINIMOS-NT [33] and the commercially available device simulator
DESSIS [34]. An implementation error of the energy transport model can therefore be
ruled out as the cause for the anomalous characteristics. The results are in good qualitative
agreement. The small quantitative differences are due to slightly different default values for
mobility and impact-ionization parameters. Self-heating cannot cause such a large negative differential
conductance and has been neglected in the simulations.
M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF