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The kink in the drain current does not appear because both contributing effects are suppressed, namely the body effect and the amplification of the impact-ionization current through the bipolar effect. As expected, a positive output conductance is obtained.
The strong influence of impact-ionization can be seen in the corresponding bulk currents (Fig. 4.7). With impact-ionization included the expected result of a body current flowing out of the transistor is obtained ( ). But if in contrast impact-ionization is neglected there is a body current flowing into the device ( ), which is several orders of magnitude smaller. It is to note that the real substrate current due to impact-ionization has the opposite sign. The situation of a positive substrate current shows that even in this bulk MOSFET hot electron diffusion into the p-body occurs. Note that this is a prediction of the energy transport model only, and is not confirmed by experimental data.
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To estimate if the resulting drain current obtained by the drift-diffusion simulation using impact-ionization shown in Fig. 4.2 is really caused by the increased body potential, simulations using the same transistor but with a body contact applied (Device 2) were made. The results are shown in Fig. 4.8 where the curve from Fig. 4.2 which used impact-ionization is depicted again--this time the full range is shown.
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From Fig. 4.3 it can be seen that the body potential is shifted from at to at resulting in a total shift of . This voltage is now applied at the body contact of Device 2. In this case the source-body diode (and at small even the drain-body diode) is biased in forward direction yielding a negative drain current of at . Accounting for this negative current offset total agreement with the curve using impact-ionization is obtained at .
M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF