IN THIS chapter empirical models for the anisotropic temperature and the non-MAXWELLian closure relation expressed by the kurtosis , which appear in the modified energy transport model, are presented. The model is then used to simulate the devices described in Section 4.1, showing that the drop in the drain current vanishes.
M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF