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By combining the modifications for an anisotropic temperature and a non-MAXWELLian
closure relation the artificial current decrease is eliminated
(Fig. 6.11). Parameter values roughly estimated from MC simulations can
be used, for example
and
. In the parameter range where the
current drop is eliminated the output characteristics are found to be rather insensitive to
the exact parameter values.
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When the modified model is applied to a body-contacted MOSFET, the difference in the
output characteristic is only marginal compared to the standard energy transport model. For example
using the values
and
leads to a maximum deviation in the
drain current of about
compared to the standard energy transport model within the bias range.
Using the modified energy transport model good agreement of the electron concentration in vertical direction with Monte Carlo data is obtained (Fig. 6.12 and Fig. 6.13). This confirms that the correction of the SOI output characteristics obtained with the modified model is based on a corrected behavior of the electron distribution in the bulk.
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M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF