3.3 Analytical Modeling of the Large-Signal Charge-Pumping Effect

The rising edge of the characteristics is considered in more detail in this section. The processes occurring during the top and bottom levels and the pulse edges are carefully analyzed. Different definitions of the charge-pumping threshold voltage and the charge-pumping flat-band potential are introduced and discussed. The non-steady state emission process is studied and the energy resolution of the large-signal charge-pumping measurements is investigated.

• 3.3.1 Rigorous Analysis of the Complete Characteristics Charge-Pumping Current versus Gate Top Level
  • Processes at the Top Level:
  • Charge-Pumping Threshold and Flat-Band Voltage
  • Processes at the Falling Edge:
  • Processes at the Rising Edge:
  • Processes at the Bottom Level:
  • Charge-Pumping Current
  • Analytical Model Versus Numerical Results
  • Frequency-Dependence of the Threshold and the Flat-Band Voltage
• 3.3.2 Emission in the Non-Steady-State Mode