The variations of the emission times have also an influence on the charge-pumping current during the course of experiment in other charge-pumping methods used to scan the lateral trap profile:
varies (namely
varies with respect to other three terminals).
are applied on the drain contact with respect
to the bulk. The source and drain are connected together. These pulses
are in opposite phase with the standard gate-bulk pulses. During
of the gate pulse the drain pulse has a value
, as in method II.
During
the drain/source-bulk junctions are not biased. As a
consequence, traps are always filled at the same effective gate bias,
independently of the reverse bias
; the oxide field remains the
same at each point of the interface during the course of experiment.
Regarding the parasitic
effect, it should be reduced in
this technique in comparison with method II.
and variable top
level
[273][34] (with respect to
-channel devices).
and variable base
level
[480][288] (with respect to
-channel devices).
). By this approach the trap distributions at
the source and drain side can be extracted independently of each other.
and
constant [480] while changing
. However, this undesired
effect does not exist in a simple conventional technique as is explained in
the following.