Let us define the entering in inversion at the oxide/semiconductor interface in
the standard way by 
, for 
-type of semiconductor. Replacing
in A.5, taking advantage
of A.4 and
we derive
The potential 
may be written as
where 
is the potential at the onset of inversion for the ideal band and MB statistics.
Band-gap narrowing and degeneration tend to cancel each other in
expression A.23. Like most quantities in our analysis,
is also only slightly influenced by the degeneration due to
FD statistics. For example, assuming 
, the sum
contributes to
with only 
at 
and with 
at 
, both being less than the
small contribution of the electrical band-gap narrowing at this doping level.
In the preceding calculation we have accurately accounted for the temperature
dependence of 
and 
.
