| BTI | bias temperature instability |
| CMOS | complementary metal-oxide-semiconductor |
| CP | charge pumping |
 | capacitance as a function of voltage |
| DC | duty cycle or direct current |
| DFT | density function theory |
| DSO | digital storage oscilloscope |
| DUT | device under test |
| eMSM | extended measurement-stress-measurement |
| EOT | effective oxide thickness |
| FPM | fast pulsed measurement |
| FC | Franck-Condon |
| FD | Fermi-Dirac |
| HCI | hot carrier injection |
 | transfer characteristic |
| LSF | line-shape function |
| MB | Maxwell-Boltzmann |
| MOS | metal-oxide-semiconductor |
| MOSFET | metal-oxide-semiconductor field effect transistor |
| MPE | (radiative) multi-phonon emission |
| MSM | measurement-stress-measurement |
| NBTI | negative bias temperature instability |
| NMP | non-radiative multi-phonon |
| OTF | on-the-fly |
| OFIT | on-the-fly (charge pumping) interface traps |
| PBTI | positive bias temperature instability |
| RD | reaction-diffusion |
| RTN | random telegraph noise |
| SPICE | Simulation Program with Integrated Circuit Emphasis |
| SRH | Shockley–Read–Hall |
| |