Temperature Scaling

6.3.2 Temperature Scaling

The temperature dependence of $ΔID ∕ID,0$ is displayed in Fig. 6.11 (top) for the thinnest device ( $tox = 1.8nm$ ) with $VG,str = − 2.25V$ . In the range $25∘C$ to $125∘C$ , the data can be perfectly fit by a logarithmic time dependence (differences would not even be visible in the plots). A slight deviation is observed for higher temperatures for $t > 10ms str$ , possibly due to the onset of the mechanism responsible for the long-time power-law behavior with a larger power-law exponent $n ≈ 0.12$ . This might be due to the dependence of two compound power-laws which are discussed in literature [49]. Apart from that, different temperatures can be scaled well to the data at $T ref = 175∘C$ , as shown by the dotted lines in Fig. 6.11 (top), and the indicated scaling factors marked by arrows.

Figure 6.11: The temperature ( $∘ 25 C$ , $∘ 75 C$ , $∘ 125 C$ , and $∘ 175 C$ ) and voltage dependence ( $− 1.75V$ , $− 2.00V$ , $− 2.25V$ , and $− 2.50V$ ) of $ΔID ∕ID,0$ degradation. Scaling to the dotted lines works perfectly for various stress voltages at equal temperatures, while different temperatures lead to a small deviation for $tstr > 10ms$ . The scaling factors are also given.

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