10.3 Outline of the Second Part

We start with an application of the generalization of Bernstein polynomials from Chapter 7 to the smoothing of Monte Carlo simulation results. The advantages compared to the conventional RSM are shown in a real world ion implantation example.

In Chapters 12 and 13 methods for describing moving boundaries are discussed and compared. Furthermore the physical models for the transport of particles above the wafer surface in the reactors are presented. Several simulations of deposition processes and their comparison with measurements provided from industrial partners demonstrate that the topography simulator developed and the algorithms it is based on is applicable to real world problems and general enough to be used for a wide variety of processes.

This work must also be seen in the context of the work of predecessors and colleagues at the Institute for Microelectronics. Dr. E. Strasser [134] and Dr. W. Pyka [97] worked on process simulation based on the cellular approach to geometry description. The new approach to the description of moving boundaries used in this work improves on the accuracy of the simulations.

Finally Chapters 14 and 15 are devoted to applications of inverse modeling prompted by industrial partners.