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September 16, 1969 |
Born in St.Pölten, Austria, | |
| parents Helmut and Paula Hössinger | ||
| 1975 - 1979 | Primary school, St.Pölten, Austria | |
| 1979 - 1987 | Secondary/high school (BRG), St.Pölten, Austria | |
| Graduated high school (BRG) with the ``Matura'' | ||
| 1987 - 1988 | Compulsory military service | |
| 1988 - 1996 | Vienna University of Technology, Austria | |
| Study of Technical Physics | ||
| January 1996 | Finished master thesis (Development of a signal processing circuit for the measurement of the acoustic energy flow through solid surfaces.) and graduated with the degree ``Diplomingenieur'' | |
| since July 1996 | Vienna University of Technology, Austria | |
| Enrolled in a full Ph.D. program at the Institute for Microelectronics under the supervision of Prof. Siegfried Selberherr | ||
| January 1998 - March 1998 | Visiting Researcher at SONY Semiconductors, | |
| Atsugi, Kanagawa-ken, Japan, | ||
| working on simulation of ion implantation processes |
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Up: Dissertation A. Hoessinger