Contents

• Kurzfassung
• Abstract
• Acknowledgment
• Contents
• List of Figures
• List of Tables
• List of Symbols
• List of Abbreviations
• 1. Introduction
  • 1.1 Semiconductor Process Technology
    • 1.1.1 Lithography
    • 1.1.2 Etching
    • 1.1.3 Deposition
    • 1.1.4 Chemical Mechanical Polishing
    • 1.1.5 Oxidation
    • 1.1.6 Ion Implantation
    • 1.1.7 Diffusion
• 2. Ion Implantation Technology
  • 2.1 Implanter Techniques
  • 2.2 Ion Implantation Process Parameters
    • 2.2.1 Dopant Species
    • 2.2.2 Ion Beam Energy
    • 2.2.3 Implantation Dose
    • 2.2.4 Tilt and Twist Angle
  • 2.3 Target Materials Properties
    • 2.3.1 Crystalline Silicon
    • 2.3.2 Polycrystalline Silicon
    • 2.3.3 Silicon Dioxide
• 3. Simulation - Theory and Modeling
  • 3.1 Analytical Method
    • 3.1.1 One-Dimensional Point Response Functions
    • 3.1.2 Two-Dimensional Point Response Functions
    • 3.1.3 Three-Dimensional Point Response Functions
    • 3.1.4 Multi-layered Structures
  • 3.2 Point Response Interface Method
  • 3.3 Monte-Carlo Method
    • 3.3.1 Energy Loss Mechanisms
    • 3.3.2 Nuclear Stopping Process
      • 3.3.2.1 Interatomic Screening Potential
      • 3.3.2.2 Average Nuclear Stopping Power
    • 3.3.3 Electronic Stopping Process
      • 3.3.3.1 Energy Loss of a Point Charge in a Free Electron Gas
      • 3.3.3.2 Effective Charge of the Projectile
      • 3.3.3.3 Empirical Electronic Stopping Model
    • 3.3.4 Thermal Lattice Vibration
    • 3.3.5 Material Damage - De-channeling
      • 3.3.5.1 Modified Kinchin-Pease Model
      • 3.3.5.2 Follow-Each-Recoil Method
      • 3.3.5.3 Point Defect Recombination
      • 3.3.5.4 Amorphization
      • 3.3.5.5 De-channeling
• 4. Monte-Carlo Simulation with MCIMPL
  • 4.1 Geometry Expansion
  • 4.2 Implantation Window
  • 4.3 Initial Conditions
  • 4.4 Trajectory Calculation
    • 4.4.1 Selection of Collision Partners
      • 4.4.1.1 Collision Partner in Amorphous Materials
      • 4.4.1.2 Collision Partner in Crystalline Materials
    • 4.4.2 Nuclear Stopping Process
    • 4.4.3 Electronic Stopping Process
    • 4.4.4 Damage Accumulation
  • 4.5 Special Features
    • 4.5.1 Damage Accumulation of Several Ion Implantation Steps
    • 4.5.2 Molecular Ion Implantation
      • 4.5.2.1 Simplified Molecular Method
      • 4.5.2.2 Full Molecular Method
    • 4.5.3 Point Response Interface
    • 4.5.4 Multiple Implantations with Varying Rotation Angles
  • 4.6 Speedup Algorithms
    • 4.6.1 Trajectory-Split Method
    • 4.6.2 Trajectory-Reuse Method
    • 4.6.3 Parallelization Method
      • 4.6.3.1 Parallelization Strategy
      • 4.6.3.2 Optimized Distribution Scheme
      • 4.6.3.3 Simulation Flow
• 5. Applications
  • 5.1 Effect of Scattering Layers
  • 5.2 Effect of Pre-amorphization
  • 5.3 Pollution of Silicon by the Implantation through SiO$_2$ Layers
  • 5.4 Implantation into Topological Complex Three-Dimensional Structures
    • 5.4.1 Threshold Voltage Adjust Implantation of an NMOS-Transistor
    • 5.4.2 Source/Drain Implantation of an NMOS-Transistor
• 6. Conclusion and Outlook
• 7. Command-line Interface of MCIMPL
• Bibliography
• List of Publications
• Curriculum Vitae