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If at the Si/SiO
interface there is a dopant concentration
and
on the oxide and silicon side, respectively, as illustrated in Fig. 4.1, the segregation coefficient can be written as [83]
 |
(4.23) |
If it is assumed that
the flux of dopants from the SiO
segment to the silicon segment through the interface is [83]
 |
(4.24) |
where
and
are the reaction rate coefficients in SiO
and silicon, respectively.
is the interface transfer coefficien which has units of velocity.
In the steady state the interface flux
and (4.24) can be transformed to the relationship
 |
(4.25) |
Next: 4.4 Model Overview with
Up: 4. Oxidation of Doped
Previous: 4.2 Five-Stream Dunham Diffusion
Ch. Hollauer: Modeling of Thermal Oxidation and Stress Effects