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1. Introduction
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Dissertation Christian Hollauer
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Contents
1. Introduction
1.1 Semiconductor Fabrication Processes
1.1.1 Lithography
1.1.2 Etching
1.1.3 Deposition
1.1.4 Chemical Mechanical Planarization
1.1.5 Oxidation
1.1.6 Ion Implantation
1.1.7 Diffusion
1.2 Isolation Techniques
1.2.1 Local Oxidation of Silicon
1.2.2 Shallow Trench Isolation
1.3 Overview and History of Process Simulators for Oxidation
1.4 Outline of the Thesis
2. Physics of Thermal Oxidation
2.1 The Material Silicon Dioxide
2.1.1 Properties of SiO
2.1.2 Structure of SiO
2.2 Principles of the Oxidation Process
2.3 Rapid Thermal Oxidation
2.4 Oxidation Parameters
2.4.1 Oxidant Species
2.4.2 Influence of Temperature
2.4.3 Influence of Pressure
2.4.4 Influence of Crystal Orientation
2.5 Nitrided Oxide Films
2.5.1 Different Nitridation Methods
2.5.2 Diffusion-Barrier Properties of Nitrided Layers
2.5.3 Nitrogen Incorporation by NO
2.5.4 Nitrogen Incorporation and Removal by NO
2.5.5 Nitridation in N and NH
2.6 The Deal-Grove Model
2.6.1 Concept and Formulation
2.6.2 Analytical Oxidation Relationship
2.6.3 Temperature Dependence of and
2.6.4 Pressure Dependence of and
2.6.5 Dependence of and on Crystal Orientation
2.6.6 Thin Film Oxidation with Deal-Grove Model
2.7 The Massoud Model
2.7.1 Experimental Fitting
2.7.2 Analytical Oxidation Relationship
3. Advanced Oxidation Model
3.1 The Diffuse Interface Concept
3.2 Mathematical Formulation
3.2.1 Oxidant Diffusion
3.2.2 Dynamics of
3.2.3 Volume Expansion of the New Oxide
3.2.4 Diffusion Coefficient and Reaction Layer
3.2.5 Mechanics
3.3 Model Overview
4. Oxidation of Doped Silicon
4.1 Dopant Redistribution
4.2 Five-Stream Dunham Diffusion Model
4.2.1 Interaction of Dopants
4.2.2 Continuity Equations
4.3 Segregation Interface Condition
4.4 Model Overview with Coupled Dopant Diffusion
5. Discretization with the Finite Element Method
5.1 Basics
5.1.1 Mesh Aspects
5.1.2 Shape Function
5.1.3 Weighted Residual Method
5.2 Discretization with Tetrahedrons
5.2.1 Shape Functions for a Tetrahedron
5.2.2 Coordinate Transformation
5.2.3 Differentiation in the Normalized Coordinate System
5.2.4 Discretization of the Oxidant Diffusion
5.2.5 Discretization of the -Dynamics
5.2.6 Discretization of the Mechanics
5.3 Assembling and Solving
5.3.1 Principle of Assembling
5.3.2 Dirichlet Boundary Conditions
5.3.3 Mechanical Interfaces
5.3.4 Complete Equation System for Oxidation
5.3.5 Solving with the Newton Method
6. Simulation of Thermal Oxidation with FEDOS
6.1 Architecture of FEDOS
6.1.1 Inputdeck
6.1.2 Wafer-State-Server
6.1.3 QQQ-solver
6.2 Simulation Procedure
6.3 Meshing Aspects
6.4 Sharp Interface and Smoothing
6.4.1 Segment Splitting
6.4.2 Smoothing
6.5 Model Calibration
6.5.1 Calibration and Parameter Extraction
6.5.2 Calibration Concept and Example
6.6 Comparison with a Two-Dimensional Simulation
7. Stress Dependent Oxidation
7.1 Oxidation Modeling with Stress
7.2 Stress Calculation Concept for Simulation
7.3 Representative Examples
7.3.1 First Example
7.3.2 Stress Dependence
7.3.3 Second Example
8. Thermo-Mechanical Stress in Interconnect Layouts
8.1 Simulation Procedure
8.1.1 Electro-Thermal Simulation
8.1.2 Thermo-Mechanical Stress Simulation
8.2 Demonstrative Example
8.2.1 Simulation Results
9. Intrinsic Stress Effects in Deposited Thin Films
9.1 Cantilever Deflection Problem
9.1.1 Principle of Cantilever Deflection
9.1.2 Stress Distribution and Relaxation
9.2 Sources of Intrinsic Stress
9.3 Modeling of the Stress Sources
9.4 Investigation of Fabricated Cantilevers
9.4.1 Cross Section
9.4.2 Strain Curve
9.4.3 Practical Example
10. Summary and Conclusions
Bibliography
Own Publications
Next:
1. Introduction
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Dissertation Christian Hollauer
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Acknowledgment
Ch. Hollauer: Modeling of Thermal Oxidation and Stress Effects
