The desired characteristics and requirements of the fabricated oxide can be mainly influenced by the used oxidant species. For a chosen oxidant species the oxide growth rate usually is controlled by the temperature. Additionally, it is possible to vary the hydrostatic pressure in the reaction chamber, if the oxidation system offers such possibilities. Furthermore, the oxidation rate is also influenced by the crystal orientation of the used silicon substrate.
The most important characteristic of oxidant molecules is that they contain oxygen atoms, which are needed for the transformation from silicon to SiO. The classical oxidant species are pure oxygen, which is also declared as dry oxidation, and water vapour, which is also declared as wet oxidation. In the middle of the 70's people started to mix pure oxygen mostly with Chlorine or Hydrocloric Acid to improve oxide quality and speed up growth rate. The state of the art are nitrided oxides for MOS-gates, which are in principle also produced by dry oxidation. Because of their extension and importance this species is described separately in Section 2.5
During dry oxidation the silicon wafer is settled to a pure oxygen gas atmosphere (O). The oxidation rate is low (< 100 nm/hr) and so the final oxide thickness can be controlled accurately. Compared with other oxides the dry oxide has the best material characteristics and quality. The chemical reaction between silicon (solid) and oxygen (gas) is
(2.1) |
During wet oxidation the silicon wafer is settled to a water vapour atmosphere (HO). Wet oxides grow really fast compared to dry oxidation, which is the biggest advantage. The reason for the much higher growth rate is the oxidant solubility limit in SiO, which is much higher for wet (HO) than for dry oxidation (O). For 1000C the typical solubility limit value is 5.210 cm for dry oxidation compared to 310 cm for wet oxidation, which is nearly 600 times higher.
Therefore, wet oxidation is applied for thick oxides in insulation and passivation layers, where thick oxide buffers are needed to suppress electric currents or to ensure high threshold voltage of parasitic transistors. The chemical reaction is
(2.2) |
The gas flow of O can be mixed in the furnace with HO, HCL, and Cl to get acceptable oxide quality at a higher growth rate. Besides a higher growth rate, Hydrocloric Acid (HCL) or Chlorine (Cl) is often used in oxidation in order to prevent metallic contamination and to help avoiding defects in the oxidation layer [31]. HCL and Cl have a cleaning effect of the furnace as well as an improvement of the oxide reliability. This means that HCL and Cl additions provide benefits to the resulting device structures such as better ion passivation, higher and more uniform oxide dielectric strength, and improved junction properties due to lower current leakage.
The mixed flows were investigated among others by Deal and Hess in the late 70's, especially for the influence on the growth rate. The addition of HO as well as Cl is investigated in [32], and of HCL in [33]. In order to see the effect of the different mixed flows on the growth rate in a clear manner, the oxide thickness over time for a (100) oriented Silicon at 1000C is plotted in Figs. 2.7-2.9. It is notable that a double logarithmic scale of the plots leads to nearly linear curves also for the mixtures.
The chemical reaction of HCL with oxygen is
(2.3) |
In wet oxidation the addition of HCL does not increase the oxidation rate, rather the oxidation rate is decreased for the same percentage as the amount of HCL is added [34]. In HO-HCL ambients the thickness uniformity and appearance of these oxides were considerably better than in pure HO ambients. Also the defects in the oxide are considerably reduced.
The oxidation rate increases significantly with the temperature in the furnace for dry as well as for wet oxidation. The temperature dependence of the oxidation rate is plotted in Fig. 2.11 for dry and Fig. 2.12 for wet oxidation. For wet oxidation in Fig. 2.12 it can be seen that 100C more temperature leads to approximately double the oxidation rate, if the temperature is increased from 900 to 1000C. The important temperature effect can also be observed for dry oxidation in Fig. 2.11, where the same temperature increase from 900 to 1000C leads to much more than double the oxidation rate.
The oxidation rate increases with the hydrostatic pressure in the furnace for dry and wet oxidation in nearly the same way. The principal advantages of higher pressure oxidation over conventional atmospheric oxidation are the faster oxidation rate (see Fig. 2.13) and the lower processing temperature generally employed [35,36]. Both lead to less impurity diffusion and minimum junction movement during the several oxidation steps which are necessary in the manufacturing of high-density multilayer IC devices. The quality and integrity of higher pressure oxides have been found to be comparable to atmospheric oxides. Oxidation-induced stacking faults are significantly reduced with higher pressure oxidation [37], which leads to improved device performance.
The studies of oxidation have shown that the oxidation rate also depends on the crystal orientation of the silicon substrate. Experiments have demonstrated many times that the oxide growth is faster on (111) oriented surfaces than on (100) oriented at any temperature for dry as well as wet oxidation. Furthermore, as plotted in Fig. 2.14 for wet oxidation, it was found that the (111) and (100) orientation represent the upper and the lower bound for oxidation rates, respectively. Therefore, the growth rate for all other orientations lies between these two extremal values [38].
It is important to understand orientation effects on oxidation more generally because many structures actually use etched trenches and other shaped silicon regions as part of their structure. Ligenza [39] suggested that the crystal orientation effect might be caused by differences in the surface density of silicon atoms on the various crystal faces. He argued that since silicon atoms are required for the oxidation process, crystal planes that have higher densities of atoms should oxidize faster. Furthermore, he argued that not only the number of silicon atoms per cm is important, but also the number of bonds matter, since it is necessary for Si-Si bonds to be broken for proceeding the oxidation. Ligenza calculated the ``available'' bonds per cm on the various silicon surfaces and concluded that oxidation rates in HO ambients should be in the order (111)>(100), which was also observed experimentally.
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