Own Publications

1

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method,'' in Proc. Industrial Simulation Conference (ISC), (Valencia, Spain), pp. 154-158, June 2003.

2

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach,'' in Proc. 33$^{rd}$ European Solid-State Device Research Conference (ESSDERC), (Estoril, Portugal), pp. 383-386, September 2003.

3

W. Wessner, Ch. Hollauer, A. Hössinger, and S. Selberherr, ``Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation,'' in Proc. Int. Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), (München, Germany), pp. 165-168, September 2004.

4

S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, and S. Selberherr, ``Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis,'' in Proc. 8$^{th}$ Int. Conference on Modeling and Simulationof Microsystems, (Anaheim, USA), pp. 620-623, May 2005.

5

S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, and S. Selberherr, ``Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress'' in Proc. SPIE's 2$^{nd}$ Int. Symposium on Microtechnologies for the New Millenium: VLSI Circuits and Systems II, (Sevilla, Spain), pp. 380-387, May 2005.

6

Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, and S. Selberherr, ``Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts,'' in Proc. 6$^{th}$ Int. Congress on Thermal Stresses, (Wien, Austria), pp. 637-640, May 2005.

7

H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, and S. Selberherr, ``Comprehensive Analysis of Vacancy Dynamics Due to Electromigration,'' in Proc. 12$^{th}$ Int. Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), (Singapore), pp. 100-103, June 2005.

8

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Three-Dimensional Simulation of Stress Dependent Thermal Oxidation,'' in Proc. Int. Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), (Tokyo, Japan), pp. 183-186, September 2005.

9

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress,'' in Proc. 208$^{th}$ Meeting of the Electrochemical Society, (Los Angeles, USA), Paper-ID 734, 1 page, October 2005. http://www.ecsdl.org/MA/.

10

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress,'' in The Physics and Chemistry of SiO$_2$ and the Si-SiO$_2$ Interface - 5, (H. Z. Massoud, J. H Stathis, T. Hattori, D. Misra, and I. Baumvol, eds.), pp. 103-113, Pennington, NJ, USA: ECS Transactions, 2005.

11

H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, and S. Selberherr, ``Microstructure and Stress Aspects of Electromigration Modeling,'' in Stress-Induced Phenomena in Metallization, (E. Zschech, Karen Maex, P. S. Ho, H. Kawasaki, and T. Nakamura, eds.), pp. 262-268, Melville, NY, USA: American Institute of Physics, 2006.

12

S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, and S. Selberherr, ``Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress,'' in Proc. 13$^{th}$ Int. Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), (Singapore), pp. 154-157, July 2006.

13

H. Ceric, Ch. Hollauer, and S. Selberherr, ``Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines,'' in Proc. 13$^{th}$ Int. Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), (Singapore), pp. 359-363, July 2006.

14

H. Ceric, Ch. Hollauer, and S. Selberherr, ``Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films,'' in Proc. Int. Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), (Monterey, USA), pp. 192-195, September 2006.

15

Ch. Hollauer, H. Ceric, and S. Selberherr, ``Modeling of Intrinsic Stress Effects in Deposited Thin Films,'' in Proc. XX Eurosensors, (Göteborg, Sweden), pp. 324-325, September 2006.

16

Ch. Hollauer, H. Ceric, S. Selberherr, A. Witvrouw, and G. van Barel, ``Investigation of Intrinsic Stress Effects in Cantilever Structures,'' in Proc. 2$^{nd}$ Annual IEEE Int. Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), (Bangkok, Thailand), pp. 151-154, January 2007.