Own Publications

Publications in Scientific Journals and Books

[J1]

S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures'', Microelectronics Journal, vol. 35, no. 10, pp. 805-810, 2004.

[J2]

M. Karner, A. Gehring, S. Holzer, and H. Kosina, ``Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling'', in Large-Scale Scientific Computing, LSSC 2005, LNCS 3743, I. Lirkov, S. Margenov, and J. Wasniewski, Eds., 2006, pp. 572-577, Springer-Verlag Berlin Heidelberg.

[J3]

M. Karner, A. Gehring, S. Holzer, H. Kosina, and S. Selberherr, ``Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics'', ECS Trans., vol. 1, no. 5, 2006, pp. 693-703.

[J4]

M. Karner, S. Holzer, M. Vasicek, W. Goes, M. Wagner, H. Kosina, and S. Selberherr, ``Numerical Analysis of Gate Stacks'', ECS Trans., vol. 3, no. 3, 2006, pp. 299-308.

[J5]

M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser, and V. Palankovski, ``Power Output Improvement of Silicon-Germanium Thermoelectric Generators'', ECS Trans., vol. 3, no. 7, 2006, pp. 1151-1162.

[J6]

M. Wagner, G. Span, S. Holzer, and T. Grasser, ``Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content'', Semiconductor Science and Technology, vol. 22, 2007, pp. 173-176.

[J7]

S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, and S. Selberherr, ``Comparison of Deposition Models for A TEOS LPCVD Process'', Microelectronics Reliability, vol. 47, no. 4-5, 2007, pp. 623-625.

[J8]

M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, and T. Grasser, `` Quantum correction for DG MOSFETs'', Computational Electronics, vol. 5, 2007, pp. 397-400.

[J9]

M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, C. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr, ``A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications'', Journal of Computational Electronics, vol. 6, 2007, pp. 179-182.

Publications in Conference Proceedings

[C1]

R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Optimization of Electrothermal Material Parameters Using Inverse Modeling'', in Proc. 33rd European Solid-State Device Research Conference (ESSDERC 2003), José Franca and Paulo Freitas, Eds., Estoril, Portugal, Sept. 2003, pp. 363-366, IEEE.

[C2]

S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Extraction of Material Parameters Based on Inverse Modeling of Three-dimensional Interconnect Structures'', in 9th Intl. Workshop an THERMal INvestigations of ICs and Systems, Aix-en-Provence, France, Sept. 2003, pp. 263-268, TIMA, 0-7803-7999-3.

[C3]

S. Holzer, A. Sheikoleslami, S. Wagner, C. Heitzinger, T. Grasser, and S. Selberherr, ``Optimization and Inverse Modeling for TCAD Applications'', in SNDT 2004, Symposium on Nano Devices Technology 2004, Hsinchu, Taiwan, May 2004, pp. 113-116.

[C4]

H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, and S. Selberherr, ``The Evolution of the Resistance and Current Density During Electromigration'', Proceedings SISPAD Conference, München, Germany, pp. 331-334, 2004.

[C5]

S. Holzer, C. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, and S. Selberherr, ``Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis'', in Eighth International Conference on Modeling and Simulation of Microsystems, Anaheim, CA, May 2004, pp. 620-623.

[C6]

M. Karner, A. Gehring, S. Holzer, and H. Kosina, ``On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling'', in 5th International Conference on Large-Scale Scientific Computations, Sozopol, Bulgaria, June 2005, pp. 33-34.

[C7]

S. Holzer, C. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, and S. Selberherr, ``Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress'', in Microtechnologies for the New Millennium 2005: VLSI Circuits and Systems, Sevilla, Spain, May 2005, pp. 380-387.

[C8]

C. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, and S. Selberherr, ``Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts'', in Sixth International Congress on Thermal Stresses, Wien, Austria, May 2005, pp. 637-640.

[C9]

H. Ceric, C. Hollauer, S. Holzer, T. Grasser, and S. Selberherr, ``Comprehensive Analysis of Vacancy Dynamics Due to Electromigration'', in 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Singapore, June 2005, pp. 100-103.

[C10]

M. Karner, A. Gehring, S. Holzer, H. Kosina, and S. Selberherr, ``Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics'', in Meet. Abstr. Electrochem. Soc., Los Angeles, CA, Oct. 2005, vol. 502, p. 569.

[C11]

A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, and S. Selberherr, ``Inverse Modeling of Oxide Deposition Using Measurements of a TEOS CVD Process'', in PhD Research in Microelectronics and Electronics, Lausanne, Switzerland, Jun. 2005, vol. 2, pp. 279-282.

[C12]

S. Holzer and S. Selberherr, ``Material Parameter Identification for Interconnect Analysis'', in The Physics of Semiconductor Devices (IWPSD - 2005), New Delhi, India, Dec. 2005, pp. 635-641, invited.

[C13]

S. Holzer and S. Selberherr, ``Optimization Issue for Interconnect Analysis'', in Proc. International Conference on Microelectronics (MIEL), Belgrade, Serbia, May, 2006, pp. 465-470, invited.

[C14]

M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, and S. Selberherr, ``VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications'', in Proc. International Workshop on Computational Electronics (IWCE), Wien, Austria, May 2006, pp. 255-256.

[C15]

A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, and S. Selberherr, ``Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes'', in Proc. 14th Iranian Electrical Engineering Conference , Tehran, Iran, May 2006, 4 pages.

[C16]

S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, and S. Selberherr ``Comparison of Deposition Models for a TEOS CVD Process'', in Proc. 14th Workshop on Dielectrics in Microelectronics, Catania, Italy, Jun. 2006, pp. 158-159.

[C17]

S. Holzer, C. Hollauer, H. Ceric, T. Grasser, and S. Selberherr, ``Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress'', in Proc. 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, Jul. 2006, pp. 154-157.

[C18]

G. Meller, L. Li, S. Holzer, and H. Kosina, ``Electron Kinetics in Disordered Organic Semiconductors'' in Proc. ACS/IEEE/MRS 2nd Annual Organic Microelectronics Workshop, Toronto, Canada. Jul. 2006, p. 42.

[C19]

S. Holzer, M. Wagner, M. Karner, L. Friembichler, E. Langer, T. Grasser, and S. Selberherr, ``A Multi-Purpose Optimization Framework for TCAD Applications'', Leuven, Belgium, Jul. 2006, p. 76.

[C20]

M. Karner, E. Ungersboeck, A. Gehring, S. Holzer, H. Kosina, and S. Selberherr, ``Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies'', in Proc. International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD) 2006, Monterey, CA, Sep. 2006, pp. 314-317.

[C21]

M. Wagner, G. Span, S. Holzer, and T. Grasser, ``Design Optimization of Large Area Si/SiGe Thermoelectric Generators'', in Proc. International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD) 2006, Monterey, CA, Sep. 2006, pp. 397-400.

[C22]

G. Meller, L. Li, S. Holzer, and H. Kosina, ``Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems'', in Proc. of the 6th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2006, Singapore, Sep. 2006, pp. 1-2.

[C23]

S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, and S. Selberherr, ``An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Application'', in Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems, Nice, France, Sep. 2006, pp. 239-244, TIMA, 2-9161-8704-9.

[C24]

M. Wagner, G. Span, S. Holzer, O. Triebl, and T. Grasser, ``Power Output Improvement of SiGe Thermoelectric Generators'', in Meet. Abstr. Electrochem. Soc., vol. 602, Cancun, Mexico, Oct. 2006, p. 1119.

[C25]

M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, and S. Selberherr, ``Numerical Analysis of Gate Stacks'', in Meet. Abstr. Electrochem. Soc., vol. 602, Cancun, Mexico, Oct. 2006, p. 1516.

[C26]

O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina, ``Adaptive Energy Integration of Non-Equilibrium Green's Functions'', in NSTI Nanotech Proceedings, vol. 3, Santa Clara, May 2007, 1-4200-6184-4, pp. 145-148.