Contents

• 1. Introduction
  • 1.1 Challenges Discussed in this Thesis
  • 1.2 The ITRS and MOORE's Law
  • 1.3 Electrical and Physical Properties
  • 1.4 Thermal Properties and Power Density
  • 1.5 Challenges
  
  
• 2. Thermal Effects in Semiconductor Devices
  • 2.1 Temperature
  • 2.2 Heating Phenomena
    • 2.2.1 Heat Flux
    • 2.2.2 ONSAGER's Theorem
    • 2.2.3 Electro-Magnetic Power Density
    • 2.2.4 Global versus Local Heating
    • 2.2.5 Heat Sinks and Sources
    • 2.2.6 Electro-Thermal Coupling
    • 2.2.7 Volume Expansion
    • 2.2.8 Mechanical Subsystem
    • 2.2.9 Micromechanics in TCAD
    • 2.2.10 Electro-Mechanical Coupling
  • 2.3 Material Properties
    • 2.3.1 Interconnect Materials
    • 2.3.2 Polycrystalline Materials
  • 2.4 Material Deposition
    • 2.4.1 Chemical Vapor Deposition
    • 2.4.2 Deposition of SiO$_2$
    • 2.4.3 Deposition of Cu - Damascene Processes
  
  
• 3. Thermal Models
  • 3.1 Electrical Conductivity
  • 3.2 Electrical Permittivity
  • 3.3 Thermal Conductivity
  • 3.4 Heat Capacitance
  • 3.5 Volume Expansion
  • 3.6 Mechanical Stress
  • 3.7 Interconnect Reliability
    • 3.7.1 Electro-Migration
    • 3.7.2 Mean Time To Failure
  
  
• 4. Optimization for Technology CAD
  • 4.1 Basic Issues on Optimization
    • 4.1.1 Optimization Loop
    • 4.1.2 Industrial Requirements
  • 4.2 Optimization Strategies
    • 4.2.1 Coordinate Search Algorithm
    • 4.2.2 Gradient-based Optimization
    • 4.2.3 DIRECT Search Optimization
    • 4.2.4 Genetic Optimization
    • 4.2.5 Evolutionary Optimization
    • 4.2.6 Simulated Annealing Approach
  • 4.3 State-of-the-art in Optimization
    • Device Purposes
    • Technology Purposes
    • Black Box Approach
    • In-situ Approach
    • 4.3.1 Design of Experiments
  • 4.4 Challenges in Optimization
    • 4.4.1 Constraints
    • 4.4.2 Selection of Optimization Strategies and Score Functions
    • 4.4.3 Convergence
    • 4.4.4 Reasonable Results versus Numerical Optimum
  • 4.5 Optimization Framework SIESTA
    • 4.5.1 Parallelization Strategy
    • 4.5.2 Simulation Tools
      • Process Simulation Tools
      • Geometry Manipulation Tools
      • Device Simulation Tools
      • Geometry and Mesh Generators
      • Graphical User Interfaces
  
  
• 5. Applications
  • 5.1 Calibration of Trenches
    • 5.1.1 Treatment of Moving Boundaries
    • 5.1.2 Quality Criteria
    • 5.1.3 TEOS Deposition
    • 5.1.4 Deposition Models
    • 5.1.5 Model Calibration
  • 5.2 Parameter Extraction of a Fusing Structure
    • 5.2.1 Fusing Structure
    • 5.2.2 Simulation and Parameter Extraction
    • 5.2.3 Results
  • 5.3 Applied Optimized Parameters
    • 5.3.1 Thermal Analysis of a Multi-Layered Interconnect Structure
    • 5.3.2 Interconnect Structure Subjected to Mechanical Stress
  
  
• 6. Conclusions
  • 6.1 Temperature as a Limiting Factor
  • 6.2 Multiple (Thermal) Redundancy
  • 6.3 New Materials and New Devices Structures
  • 6.4 Outlook
  
  
• A. Mathematical Notes
  • A.1 Convexity of Sets and Domains
  • A.2 VOIGT Notation
  • A.3 Norms
    • A.3.1 Definition
    • A.3.2 Special Norms
  • A.4 Aspect Ratio
  
  
• B. Timing
  • B.1 Duty Cycle
  • B.2 Delay Times
  
  
• Bibliography
• Own Publications
• Curriculum Vitae
• About this document ...