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This section focuses on the comparison of calibrated models for
Tetra-ethoxy-silane (TEOS)
deposition in a CVD process according
to SEM images of
layers (cf. Figure 5.1 [317]).
In the first part, the level-set algorithm is briefly introduced followed by the
description of the quality calculation of the simulation results and different
models for deposition of
layers for trenches with different aspect
ratios.
At the end of this section, the final parameter calibration for the
best model is presented and discussed in detail.