5.1 Calibration of Trenches

This section focuses on the comparison of calibrated models for Tetra-ethoxy-silane (TEOS) $ {\mathrm{Si(C_2H_5O)_4}}$ deposition in a CVD process according to SEM images of $ \mathrm{SiO_2}$ layers (cf. Figure 5.1 [317]). In the first part, the level-set algorithm is briefly introduced followed by the description of the quality calculation of the simulation results and different models for deposition of $ \mathrm{SiO_2}$ layers for trenches with different aspect ratios. At the end of this section, the final parameter calibration for the best model is presented and discussed in detail.



Subsections


Stefan Holzer 2007-11-19