First and foremost I would like to thank my parents. Without their support and understanding I would not have been able to reach even a minor part of my educational and scientific achievements.
I am also very grateful to my colleagues from Ioffe Physical-Technical Institute, who supported me from the beginning of my scientific carrier. Many thanks to Dr. Sergey M. Suturin, Prof. Nikolay S. Sokolov, Dr. Mikhail I. Vexler and Prof. Igor V. Grekhov for sharing with me their outstanding research experience.
To great length I am grateful to Professor Tibor Grasser for granting me a Ph.D position at the TU Wien. He always supported me with useful advices during the whole time I have been working on this dissertation. Also, he provided me with a very interesting research area focused in 2D materials.
I also want to thank all my colleagues from the Institute for Microelectronics (TU Wien). I am especially thankful to Dr. Stanislav Tyaginov for his support during my endeavor into the subject of reliability, to Michael Waltl for technical and programming assistance during my measurements. I am grateful to Gerhard Rzepa, Alexander Grill and Dr. Wolfgang Goes for their crucial contribution to modeling of MoS2 transistors and to Dr. Alexander Makarov for his help with LaTeX.
This work would not we possible without participation of Anderson D. Smith, Sam Vaziri and Prof. Mikael Ostling from KTH, who provided me graphene devices, and Marco M. Furchi from TU Wien, who fabricated MoS2 transistors.
Also, I gratefully acknowledge useful discussions with Prof. Max C. Lemme (University of Siegen), Prof. Thomas Mueller (TU Wien), Dr. Ben Kaczer (imec) and Dr. Hans Reisinger (Infineon).
Last but not least, I am indebted to Dmitry Polyushkin, Andreas Pospischil and Stefan Wagesreither from TU Wien for their technical support at the beginning stage of my graphene experiments.