[1]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors. Japanese Journal of Applied Physics, 2016. accepted.

[2]   Y. Illarionov, M. Bina, S. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, and T. Grasser. Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs. IEEE Transactions on Electron Devices, 62(9):2730–2737, 2015.

[3]   Y. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, and T. Grasser. Hot Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences. IEEE Transactions on Electron Devices, 62(11):3876–3881, 2015.

[4]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors. In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials(SSDM), pages 650–651, 2015.

[5]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors. In Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, pages 81–84, 2015.

[6]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors. In Proceedings of 45th European Solid-State Device Research Conference (ESSDERC), pages 172–175, 2015.

[7]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser. Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors. In Abstracts of Graphene-2015, 2015.

[8]   Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, and T. Grasser. Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors. In Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS), pages XT.2.1–XT.2.6, 2015.

[9]   Y. Illarionov, M. Bina, S. Tyaginov, and T. Grasser. An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs. Japanese Journal of Applied Physics, 53:04EC22–1–04EC22–4, 2014.

[10]   Y. Illarionov, M. Bina, S. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, and T. Grasser. A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs. In Proceedings of the 2014 IEEE International Reliability Physics Symposium (IRPS), pages XT13.1–XT13.6, 2014.

[11]    Y. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, and T. Grasser. Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge. In 2014 IEEE Silicon Nanoelectronics Workshop, pages 29–30, 2014.

[12]   Y. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, and T. Grasser. Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors. Applied Physics Letters, 105(14):1435071–1435075, 2014.

[13]   Y. Illarionov, S. Tyaginov, M. Bina, and T. Grasser. A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs. In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM), pages 728–729, 2013.

[1]   Y. Illarionov. Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures. Dissertation, Ioffe Physical-Technical Institute, 2015. in Russian.

[2]   Y. Illarionov, M. Vexler, V. Fedorov, S. Suturin, N. Sokolov, and T. Grasser. Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics. In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials(SSDM), pages 330–331, 2015.

[3]   Y. Illarionov, M. Vexler, M. Karner, S. Tyaginov, J. Cervenka, and T. Grasser. TCAD Simulation of Tunneling Leakage Current in CaF₂/Si(111) MIS Structures. Current Applied Physics, 15:78–83, 2015.

[4]   M. Vexler, Y. Illarionov, S. Tyaginov, and T. Grasser. Adaptation of the Model of Tunneling in a Metal/CaF₂/Si(111) System for Use in Industrial Simulators of MIS Devices. Semiconductors, 49(2):259–263, 2015.

[5]   Y. Illarionov. Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures. Typography of St-Petersburg State Polytechnical University, St. Petersburg, 2014. in Russian.

[6]   Y. Illarionov, M. Vexler, V. Fedorov, S. Suturin, and N. Sokolov. Electrical and Optical Characterization of Au/CaF₂/p-Si(111) Tunnel-Injection Diodes. Journal of Applied Physics, 115:223706–1–223706–5, 2014.

[7]   S. Tyaginov, Y. Illarionov, M. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, and T. Grasser. Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric. Journal of Computational Electronics, 1(1):1–6, 2014.

[8]   M. Vexler, Y. Illarionov, S. Tyaginov, N. Sokolov, V. Fedorov, and T. Grasser. Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT. In Proceedings of XIII International Conference ’DIELECTRICS’, pages 159–162, 2014. in Russian.

[9]   Y. Illarionov, M. Vexler, V. Fedorov, S. Suturin, D. Isakov, and I. Grekhov. Optical Characterization of the Injection Properties of MIS Structures with Thin CaF₂ and HfO₂/SiO₂ insulating Layers on Silicon. In Abstracts of XI Russian Conference on Semiconductor Physics, page 229, 2013. in Russian.

[10]   Y. Illarionov, M. Vexler, V. Fedorov, S. Suturin, and N. Sokolov. Light Emission from the Au/CaF₂/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling through a Thin (1-2 nm) Fluoride Layer. Thin Solid Films, 545:580–583, 2013.

[11]   Y. Illarionov, M. Vexler, D. Isakov, V. Fedorov, and Y. Sing. Analysis of the Electroluminescence Features of Silicon Metal-Insulator-Semiconductor Structures as a Tool for Diagnostics of the Injection Properties of a Dielectric Layer. Technical Physics Letters, 39(10):878–882, 2013.

[12]   G. Kareva, M. Vexler, and Y. Illarionov. Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode. Microelectronic Engineering, 109:270–273, 2013.

[13]   G. Kareva, M. I. Vexler, and Y. Illarionov. Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode. In Book of Abstracts of the 18th Conference on Insulating Films on Semiconductors (INFOS), pages 246–247, 2013.

[14]   S. Tyaginov, D. Osintsev, Y. Illarionov, J. Park, H. Enichlmair, M. Vexler, and T. Grasser. Tunnelling of Strongly Non-Equilibrium Carriers in the Transistors of Traditional Configuration. In Abstracts of XI Russian Conference on Semiconductor Physics, page 441, 2013. in Russian.

[15]   M. Vexler, Y. Illarionov, S. Suturin, V. Fedorov, and N. Sokolov. Tunnel Charge Transport in Au/CaF₂/Si(111) System. In Abstracts of XI Russian Conference on Semiconductor Physics, page 74, 2013. in Russian.

[16]   M. Vexler, S. Tyaginov, Y. Illarionov, Y. Sing, A. Shenp, V. Fedorov, and D. Isakov. A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures. Semiconductors, 47(5):686–694, 2013.

[17]   Y. Illarionov, M. Vexler, S. Suturin, V. Fedorov, and N. Sokolov. Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor. Acta Physica Polonica-Series A, 121(1):158–161, 2012.

[18]   Y. Illarionov, M. Vexler, S. Suturin, N. Sokolov, and V. Fedorov. Optical Characterization of the Injection Properties of Tunnel-Thin Calcium Fluoride Films. In Abstract Book of the 43rd IEEE Semiconductor Interface Specialists Conference (SISC), page P.28, 2012.

[19]   Y. Illarionov, M. Vexler, S. Suturin, V. Fedorov, and N. Sokolov. Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor. In Book of Abstracts of the Advances in Applied Physics and Materials Science (APMAS) Congress, page 131, 2011.

[20]   Y. Illarionov, M. Vexler, S. Suturin, V. Fedorov, N. Sokolov, K. Tsutsui, and K. Takahashi. Electron Tunneling in MIS Capacitors with the MBE-grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation. In Book of Abstracts of the 17th Conference on Insulating Films on Semiconductors (INFOS), page 1, 2011.

[21]   Y. Illarionov, M. Vexler, S. Suturin, V. Fedorov, N. Sokolov, K. Tsutsui, and K. Takahashi. Electron Tunneling in MIS Capacitors with the MBE-grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation. Microelectronic Engineering, 88(7):1291–1294, 2011.

[22]   M. Vexler, Y. Illarionov, S. Suturin, V. Fedorov, and N. Sokolov. Au/CaF₂/nSi(111) Tunnel Emitter Phototransistor. Solid-State Electronics, 63(1):19–21, 2011.

[23]   Y. Illarionov, S. Suturin, and M. Vexler. Investigation of Phototransistor Effect and Tunneling Processes in MIS-structures Au/CaF₂/nSi(111). In Abstracts of XXXVIII Week of Science in St-Petersburg State Polytechnical University, page 11, 2010. in Russian.

[24]   Y. Illarionov, M. Vexler, S. Suturin, V. Fedorov, and N. Sokolov. Characteristics of Thin Calcium Fluoride Barrier Layers for Field-Effect Transistors and Functional Electronics Devices. Technical Physics Letters, 36(5):404–407, 2010.

[25]   N. Sokolov, S. Suturin, V. Fedorov, Y. Illarionov, A. Sitnikova, A. Nashchekin, I. Serenkov, V. Saharov, N. Sibirev, and V. Dubrovskii. Cobalt Nanoparticles Epitaxially Grown on CaF₂(111). In Abstracts of Reports of 18th International Symposium ’NANOSTRUCTURES: PHYSICS AND TECHNOLOGY’, page 323, 2010.

[26]   M. Vexler, Y. Illarionov, S. Suturin, V. Fedorov, and N. Sokolov. The Phototransistor Action of a Reverse-Biased Au/CaF₂[3-7ML]/n-Si(111) Structure. Semiconductor Science and Technology, 25:095007, 2010.

[27]   M. Vexler, Y. Illarionov, S. Suturin, V. Fedorov, and N. Sokolov. Tunneling of Electrons with Conservation of the Transverse Wave Vector in the Au/CaF₂/Si(111) System. Physics of the Solid State, 52(11):2357–2363, 2010.

[28]   Y. Illarionov, S. Suturin, and M. Vexler. Tunneling and Phototransistor Effect in Au/CaF₂/nSi(111) System. In Abstracts of XXXVII Week of Science in St-Petersburg State Polytechnical University, page 11, 2009. in Russian.

[29]   Y. Illarionov, S. Suturin, and M. Vexler. Tunneling and Phototransistor Effect in Au/CaF₂/nSi(111) System. In Abstracts of 11th Youth Russian Conference on Physics of Semiconductors and Nanostructures, Semiconductor Optical and Nanoelectronics, page 17, 2009. in Russian.