[1] N. Khalil, I. Baran, and O. Tan,
``Reduced Order Models for Double-Cage Induction Motors",
IEEE Transactions on Power Apparatus and Systems, PAS-101(9),
pages 3135-3140, Sep. 1982.
[2] N. Khalil,
``Framework Component: Tool Control Language", Semiconductor Research
Corporation publication S90013, Also available as CAD Framework
Initiative document TCAD-90-T-1, D. Boning, Editor, May 1990.
[3] N. Khalil and J. Faricelli,
``MOSFET Two-Dimensional Doping Profile Determination", In
S. Selberherr, H. Stippel, and E. Strasser, Editors, in SISDEP-95,
pages 365-368, 1993.
[4] N. Khalil, J. Faricelli, D. Bell and S. Selberherr,
`` A Novel Method for Extracting the Two-Dimensional Doping Profile of
a Sub-Half Micron MOSFET", in Digest Symposium VLSI Technology,
pages 131-132, 1994.
[5] N. Khalil, J. Faricelli, D. Bell and S. Selberherr,
``The Extraction of Two-Dimensional MOS Transistor Doping via Inverse
Modeling", IEEE Electron Device Letters, EDL-16, No. 1, pages 17-19,
Jan. 1995.
[6] N. Khalil, J. Faricelli, C.-L. Huang, and S. Selberherr,
``Two-Dimensional Dopant Profiling of Submicron MOSFET's Using
Nonlinear Least Squares Inverse Modeling", (invited),
in Proc. of the Third Int'l Workshop on the Measurement and
Characterization of Ultra-Shallow Doping Profiles in Semiconductors,
pages 6.1-6.9, 1995.
[7] N. Khalil, G. Nanz, R. Rios, and S. Selberherr,
``A B-Splines Regression Technique to Determine One-Dimensional MOS Doping
Profiles", Accepted for presentation in ESSDERC-95, 1995.
[8] N. Khalil, C.L. Huang, J. Faricelli, and S. Selberherr,
``Measurements and Simulations of Short-Channel MOSFET I-V and C-V
characteristics", In preparation for publication in IEEE Trans.
Electron Devices.