D I S S E R T A T I O N

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften
eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik

von

Nadim Khalil

55 Brookdale Circle
Shrewsbury, MA. 01545, USA
Matr.-Nr. 9127879
geboren am 18. Dezember 1954 in Zouk Mikael, Libanon

Wien, im Mai 1995

• Abstract
• Kurzfassung
• Acknowledgments
• Contents
• List of Figures
  • 1 Introduction
    • 1.1 Review of Previous Work
    • 1.2 VISTA
    • 1.3 Thesis Overview
• Part I: Theory and Implementation
  • 2 Mathematical Considerations
    • 2.1 Nonlinear Least Squares Optimization
      • 2.1.1 Algorithm Description
      • 2.1.2 Calculation of the Jacobian Matrix
      • 2.1.3 Eigenvalues Analysis of the Approximate Hessian Matrix
      • 2.1.4 Parameters Constraints
      • 2.1.5 Parameters Accuracy and Confidence Region
      • 2.1.6 Termination Criteria
    • 2.2 Nonlinear Programming
      • 2.2.1 Sequential Linear Programming
      • 2.2.2 Sequential Quadratic Programming
    • 2.3 Empirical Model Building
      • 2.3.1 Run Matrix Generation
      • 2.3.2 Polynomial Approximation Algorithm
    • 2.4 The Monte Carlo Simulation Method
      • 2.4.1 Statistical Background
      • 2.4.2 Normal Distribution
      • 2.4.3 Multinormal Distribution
    • 2.5 Splines and TPS
      • 2.5.1 One Dimensional Spline Representation
      • 2.5.2 Tensor Product Spline Representation
  • 3 Software Issues
    • 3.1 Model Objects: Syntax and Semantics
    • 3.2 Architecture
    • 3.3 Task Module
• Part II: Applications
  • 4 MOSFET Profiling Using Inverse Modeling
    • 4.1 Background
    • 4.2 Capacitance Calculation
    • 4.3 Profile Representation
    • 4.4 Methodology Overview
    • 4.5 One-Dimensional MOS Doping Profiling
      • 4.5.1 An Algorithm for the Selection of B-splines Representation
      • 4.5.2 Results
    • 4.6 One-Dimensional Source/Drain Doping Profiling
      • 4.6.1 Results
    • 4.7 Starting Two-Dimensional Profile Generation
    • 4.8 Two-Dimensional Extraction Results
    • 4.9 Discussion
      • 4.9.1 Validation
      • 4.9.2 Confidence Region of the Extracted Profile
      • 4.9.3 Method Limitations
      • 4.9.4 On the Subject of Debye Length Limitation
    • 4.10 Conclusion
  • 5 TCAD Simulators Calibration
    • 5.1 Mobility Model Calibration
      • 5.1.1 Model Equations
      • 5.1.2 Parameters Extraction
      • 5.1.3 Comparisons with Experimental Data
    • 5.2 Avalanche Model Calibration
      • 5.2.1 Modeling Equations
      • 5.2.2 Results
    • 5.3 Implant Model Calibration
      • 5.3.1 Dual Pearson Distribution Functions
      • 5.3.2 Fit to SIMS Results
    • 5.4 Conclusion
  • 6 Technology Characterization
    • 6.1 Statistically Based Worst Case Characterization
      • 6.1.1 Device Variation Analysis
      • 6.1.2 Worst Case Condition Calculations
      • 6.1.3 Corner Parameter Values Determination
    • 6.2 Analytical Model Parameter Extraction
      • 6.2.1 PCIM Model fit
    • 6.3 MOSFET Gate Length Determination
      • 6.3.1 An empirical model
    • 6.4 Conclusion
  • 7 Conclusion
    • 7.1 Suggestions for Future Work
      • 7.1.1 Nonlinear Least-Squares Optimizer Extensions
      • 7.1.2 Technology Design Through Optimization
    • 7.2 Epilogue
• References
  • List of Publications
    • Author of
    • Co-Author in
  • Curriculum Vitae
• Index
• About this document ...