The previous 1D extracted profiles are combined to generate the starting TPS MOSFET profile representation. The deep depletion profile and the extracted diode profile are spread horizontally under the gate and in the source/drain region respectively. Integrating both profiles into a single TPS requires usage of the same knot sequence. This is achieved by fitting the source/drain profile using the channel profile knots, or alternatively, by performing the two extraction using the same spline partitioning. Both methods have been tested successfully. The two 1D profiles are plotted together in Fig. 4.7. As seen they become cofounded at a given depth into the silicon.
Figure 4.7: Deep depletion channel (solid) and source/drain net profiles.
The other TPS is generated by rotating the SIMS profile assuming a certain subdifusion factor that relates the vertical to the lateral junction location:
where 
and 
are the lateral and vertical junction
locations respectively.
Generally, the value of 
is adjusted to yield the measured
effective electrical channel length. The resultant 2D starting profile
for our example is shown in Fig. 4.8.