The preceding two chapters covered the mathematical basis and software implementation issues of TCAD tasks within the VISTA framework. This chapter starts the second part of this thesis which is devoted to typical TCAD applications for the characterization of state-of-the-art submicron CMOS technology. A new method for the determination of MOSFET doping profiles from electrical measurements via inverse modeling is presented first. This critical application illustrates the important role TCAD can play in technology characterization.