Part II: Applications

• 4 MOSFET Profiling Using Inverse Modeling
  • 4.1 Background
  • 4.2 Capacitance Calculation
  • 4.3 Profile Representation
  • 4.4 Methodology Overview
  • 4.5 One-Dimensional MOS Doping Profiling
    • 4.5.1 An Algorithm for the Selection of B-splines Representation
    • 4.5.2 Results
  • 4.6 One-Dimensional Source/Drain Doping Profiling
    • 4.6.1 Results
  • 4.7 Starting Two-Dimensional Profile Generation
  • 4.8 Two-Dimensional Extraction Results
  • 4.9 Discussion
    • 4.9.1 Validation
    • 4.9.2 Confidence Region of the Extracted Profile
    • 4.9.3 Method Limitations
    • 4.9.4 On the Subject of Debye Length Limitation
  • 4.10 Conclusion
• 5 TCAD Simulators Calibration
  • 5.1 Mobility Model Calibration
    • 5.1.1 Model Equations
    • 5.1.2 Parameters Extraction
    • 5.1.3 Comparisons with Experimental Data
  • 5.2 Avalanche Model Calibration
    • 5.2.1 Modeling Equations
    • 5.2.2 Results
  • 5.3 Implant Model Calibration
    • 5.3.1 Dual Pearson Distribution Functions
    • 5.3.2 Fit to SIMS Results
  • 5.4 Conclusion
• 6 Technology Characterization
  • 6.1 Statistically Based Worst Case Characterization
    • 6.1.1 Device Variation Analysis
    • 6.1.2 Worst Case Condition Calculations
    • 6.1.3 Corner Parameter Values Determination
  • 6.2 Analytical Model Parameter Extraction
    • 6.2.1 PCIM Model fit
  • 6.3 MOSFET Gate Length Determination
    • 6.3.1 An empirical model
  • 6.4 Conclusion
• 7 Conclusion
  • 7.1 Suggestions for Future Work
    • Nonlinear Least-Squares Optimizer Extensions
    • Technology Design Through Optimization
  • 7.2 Epilogue