In MINIMOS, the impact ionization rate is based on the following exponential equation [46]:
Where 
is the local electric field, 
is the distance from the
SiO
/Si interface, and 
, the depth dependence, is given by the
expression:
The values of the coefficients in the above equation can be determined by
nonlinear least squares optimization to match the MINIMOS simulated 
values to experimental data.
Figure:
Comparison of measured (symbols) and simulated (lines) values,
at 
= 3, 3.5, and 4 Volts, and gate length of 
Figure 5.7:
Comparison of measured (symbols) and simulated with (solid line) and without
(dashed line) calibration of peak values,
as a function of gate lengths.