Fig. 5.6 shows measured and simulated substrate current data for
a MOSFET with an effective channel length of 
as a function of
gate voltage for three drain voltages around the supply voltage of 3.3 Volts.
As shown the agreement is reasonably good given the empirical nature of the
model. Similar agreement is also achieved for different device lengths
as illustrated in Fig. 5.7 which compares measured and simulated
peak 
as a function of gate lengths. Fig. 5.7 also
shows the MINIMOS simulated without calibration to highlight the fit
improvement.