In this dissertation, four TCAD framework task modules are introduced:
Applications of the task modules to the characterization of CMOS ULSI technology are described. A major contribution of this work is the new technique for the determination of the two-dimensional doping profile of a MOSFET. This inverse modeling method uses the nonlinear least-squares optimizer to determine the coefficients of the B-spline and tensor product spline functions that represent the one- and two-dimensional profile variation from capacitance measurement.
The nonlinear optimizer is also used for the calibration of TCAD simulators to a manufacturing process. Three different examples illustrate this capability. A complete TCAD based characterization methodology that involves the use of the four task modules demonstrate the critical role of TCAD task in state-of-the-art technology development. This methodology covers the process of generating analytical MOSFET models for circuit simulations based on nominal extracted doping profiles and a limited set of statistical device variables. A final application, namely a method for MOSFET gate length determination provides a further confirmation of the essential role TCAD tasks can play in submicron technology characterization and development.