Next: 8.2.2 Printing of a
Up: 8.2 Photoresist Exposure and
Previous: 8.2 Photoresist Exposure and
Figure 8.18:
PAC concentration after exposure and developed resist profile
for contact hole printing over a planar silicon substrate for coherent
illumination (left: best focus, right: 1 m defocus above).
|
Figure 8.19:
PAC concentration after exposure and developed resist profile
for contact hole printing over a planar silicon substrate for circular
illumination (left: best focus, right: 1 m defocus above).
|
Figure 8.20:
PAC concentration after exposure and developed resist profile
for contact hole printing over a planar silicon substrate for quadrupole
illumination (left: best focus, right: 1 m defocus above).
|
Next: 8.2.2 Printing of a
Up: 8.2 Photoresist Exposure and
Previous: 8.2 Photoresist Exposure and
Heinrich Kirchauer, Institute for Microelectronics, TU Vienna
1998-04-17