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Figure 8.21:
PAC
concentration after exposure and developed resist profile for contact hole
printing over a dielectric oxide step for coherent illumination
(left: best focus, right: 1 m defocus above).
|
Figure 8.22:
PAC
concentration after exposure and developed resist profile for contact hole
printing over a dielectric oxide step for circular illumination
(left: best focus, right: 1 m defocus above).
|
Figure 8.23:
PAC
concentration after exposure and developed resist profile for contact hole
printing over a dielectric oxide step for quadrupole illumination
(left: best focus, right: 1 m defocus above).
|
Next: 8.2.3 Printing of a
Up: 8.2 Photoresist Exposure and
Previous: 8.2.1 Printing of a
Heinrich Kirchauer, Institute for Microelectronics, TU Vienna
1998-04-17