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Figure 8.24:
PAC concentration after exposure and developed resist profile for contact
hole printing over a reflective a-silicon step for coherent illumination
(left: best focus, right: 1 m defocus above).
|
Figure 8.25:
PAC
concentration after exposure and developed resist profile for contact hole
printing over a reflective a-silicon step for circular illumination
(left: best focus, right: 1 m defocus above).
|
Figure 8.26:
PAC concentration after exposure and developed resist profile for contact
hole printing over a reflective a-silicon step for quadrupole illumination
(left: best focus, right: 1 m defocus above).
|
Next: 8.2.4 Two-Dimensional Cross Sections
Up: 8.2 Photoresist Exposure and
Previous: 8.2.2 Printing of a
Heinrich Kirchauer, Institute for Microelectronics, TU Vienna
1998-04-17