The sensitivity of the memristive charge (flux)-based sensing scheme is determined by the value of the
memristance (memductance) modulation with respect to the charge (flux) applied to the memristor. The
amount of charge needed to pass through the memristor to change the memristance from its minimum to
its maximum value for the TiO memristor is relatively high and is in the range of tens to
hundreds of microcoulombs for a nanometer-scale motion of the doping front as the mobility
of dopants (oxygen vacancies) in the TiO
thin film is quite low (
[69]).
However, it turns out that it is in the range of nanocoulombs to picocoulombs in the spintronic
memristors for a micrometer-scale motion of the magnetic domain wall (extracted from data presented
in [171, 172, 94]) Therefore, the memristive sensor based on the TiO
memristors can measure
capacitances in the range of to microfarad to nanofarad. Because spin-based memristors can be more
finely tuned compared to the TiO
memristor [167, 64], they are promising for measuring
capacitances of 3-6 orders of magnitude smaller than that measured by using the TiO
memristor.
Nano-scale feature size, low cost and the integration capabilities are other advantages of spintronic
memristors [96].