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[2] Paul Manstetten, Josef Weinbub, Andreas Hössinger, and Siegfried Selberherr. “Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces”. In: Procedia Computer Science 108 (2017), pp. 245–254.
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[4] Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity”. In: Solid-State Electronics 128.2 (2017), pp. 141–147.
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[1] Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity”. In: Solid-State Electronics 128.2 (2017). invited, pp. 141–147.
[3] Paul Manstetten, Josef Weinbub, Andreas Hössinger, and Siegfried Selberherr. “Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces”. In: Procedia Computer Science 108 (2017), pp. 245–254.
[2] Paul Manstetten, Lukas Gnam, Andreas Hössinger, Siegfried Selberherr, and Josef Weinbub. “Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme”. In: Lecture Notes in Computer Science. accepted, in print.
[7] Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes”. In: Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE Xplore, 2016, pp. 120–123.
[4] Paul Manstetten, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron”. In: Proceedings of the 22nd International Conference on Simulation of Semiconductor Processes and Devices. Talk given in Kamakura, Japan, 2017, pp. 73–76.
[5] Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures”. In: Proceedings of the 21st International Conference on Simulation of Semiconductor Processes and Devices. Poster presented in Nürnberg, Germany, 2016, pp. 265–268.
[6] Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, and Siegfried Selberherr. “Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach”. In: Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Talk given in Vienna, 2016, pp. 68–69.
[8] Paul Manstetten, Vito Simonka, Georgios Diamantopoulos, Lukas Gnam, Alexander Makarov, Andreas Hössinger, and Josef Weinbub. “Computational and Numerical Challenges in Semiconductor Process Simulation”. In: CSE17 Abstracts. Talk given by Josef Weinbub at the SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 2017-02-27 – 2017-03-03. 2017, p. 46.
Name | Paul Ludwig Manstetten |
Address | Pezzlgasse 14/8A |
1170 Wien | |
Phone | +43 660 740 1624 |
paul@remans.de | |
Date of Birth | September 17, 1984, Berlin |
Nationality | German |
10/2015 | - | present |
Doctoral Program, Electrical Engineering, |
10/2010 | - | 09/2012 |
Graduate Studies, Computational Engineering, |
10/2005 | - | 03/2010 |
Graduate Studies, Mechatronics, |
09/2015 | - | present |
Project Assistant, Christian Doppler Laboratory for High Performance TCAD, |
05/2012 | - | 09/2012 |
Research Assistant, Department of Computer Science 10, FAU Erlangen-Nürnberg |
02/2012 | - | 05/2012 |
Research Assistant, Chair of Sensor Technology, FAU Erlangen-Nürnberg |
10/2009 | - | 03/2010 |
Research Assistant, LaS3, FH Regensburg |
11/2012 | - | 09/2015 |
Application Engineer for Optical Simulations, OSRAM Opto Semiconductors GmbH, Regensburg |
03/2008 | - | 07/2008 |
Intern (Advanced Development Group), Continental Automotive GmbH, Regensburg |
10/2006 | - | 02/2007 |
Intern (Technical Lab), BMW AG, Regensburg |
06/2005 | - | 08/2005 |
Intern, Infineon AG, Regensburg |