Own Publications

1

G. Roehrer, M. Knaipp, R. Minixhofer, and H. Noll, ``Investigations of Sidewall Effects in Bipolar Transistors,'' in Proc. Microelectronics, Devices and Materials, MIDEM, pp. 133-138, 1999.

2

C. Harlander, R. Sabelka, R. Minixhofer, and S. Selberherr, ``Three-Dimensional Transient Electro-Thermal Simulation,'' in 5th THERMINIC Workshop, (Rome, Italy), pp. 169-172, Oct. 1999.

3

R. Minixhofer, ``Why Bother about Substrate Currents? Risks of Substrate Currents in Smart Power Chips,'' in Workshop on Substrate Current Effects in Smart-Power and Mixed-Signal ASICs, (Cork, Ireland), pp. 5-10, Sept. 1999.
(invited).

4

R. Minixhofer, G. Roehrer, and S. Selberherr, ``Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication,'' in Proceedings Simulation in Industry-14th European Simulation Symposium and Exhibition, (Dresden, Germany), pp. 70-74, Oct. 2002.

5

R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Optimization of Electrothermal Material Parameters using Inverse Modeling,'' in Proceedings 33rd European Solid-State Devices Research Conference, (Estoril, Portugal), pp. 363-366, Sept. 2003.

6

J. Cervenka, A. Hoessinger, R. Minixhofer, T. Grasser, and S. Selberherr, ``Dreidimensionale Modellierung Elektronischer Bauelemente,'' in Beiträge der Informationstagung Mikroelektronik, (Vienna, Austria), pp. 377-382, Oct. 2003.

7

S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures,'' in Proceedings 9th THERMINIC Workshop, (Aix-en-Provence, France), pp. 263-268, Sept. 2003.

8

G. Leonardelli, G. Roehrer, and R. Minixhofer, ``A Novel System for Fully Automated Creation of Layout Documentation and Test Programs for Electrical Test Structures,'' in Proceedings IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, (Boston, USA), pp. 205-207, May 2004.

9

S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, and S. Selberherr, ``Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures,'' Microelectronics Journal, vol. 35, no. 2/3, pp. 805-810, 2004.

10

M. Knaipp, G. Roehrer, R. Minixhofer, and E. Seebacher, ``Investigations on the High Current Behavior of Lateral Diffused High-Voltage Transistors,'' IEEE Trans.Electron Devices, vol. 51, pp. 1711-1720, Oct. 2004.

11

A. Hoessinger, R. Minixhofer, and S. Selberherr, ``Full Three-Dimensional Analysis of a Non-Volatile Memory Cell,'' in Proceedings International Conference on Simulation of Semiconductor Processes and Devices, (Munich, Germany), pp. 363-366, 2004.

12

R. Minixhofer and D. Rathei, ``Using TCAD for Fast Analysis of Misprocessed Wafers and Yield Excursions,'' in Proceedings IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, (Munich, Germany), pp. 1-3, Apr. 2005.

13

R. Minixhofer, ``Semiconductor Process Simulation,'' in Forum Gesellschaft für Mikroelektronik, (Vienna, Austria), p. 31, Mar. 2005.
(invited).