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List of Tables
1.1
Evolution in the number of transistors implemented within a single IC.
4.1
Thickness of layers employed.
4.2
Critical values
G
c
for the considered interface.
4.3
Summary of the conditions for delamination propagation.
4.4
Geometry of the samples used in the simulation study. The thickness
h
2
includes the thickness of the adhesive. The comments indicate the type of deposition process and the presence or absence of the Ti layer.
4.5
G
c
values measured from experimental data and calculated using FEM simulations. The
G
c
values calculated for Sample 3, Sample 4, and 5 are in good agreement with the experimentally measured
G
c
values.
5.1
Parameters used for the simulations. The value
(2
γ
s
-
γ
gb
)
was used as fitting parameter.
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