[1]   S. Papaleo, L. Filipovic, W. H. Zisser, M. Rovitto, H. Ceric, and S. Selberherr, “Modeling Intrinsic Stress Build-Up during Tungsten Deposition in Open Through Silicon Vias,” Thin Solid Films, 2016. submitted.

[2]   M. Rovitto, S. Papaleo, and H. Ceric, “Diffuse Interface Model for Electromigration Void Evolution in Open Through Silicon Vias,” IEEE Transactions on Device and Materials Reliability, 2016. submitted.

[3]   S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, and S. Selberherr, “Stress Evolution During Nanoindentation in Open TSVs,” IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 470–474, 2016.

[4]   S. Papaleo, M. Rovitto, and H. Ceric, “Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall,” in Proc. 2016 Electronic Components and Technology Conference (ECTC), pp. 1617-1622, 2016.

[5]   S. Papaleo and H. Ceric, “A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. PA–2–1–PA–2–4, 2016.

[6]   S. Papaleo, W. H. Zisser, and H. Ceric, “Factors that Influence Delamination at the Bottom of Open TSVs,” in Proc, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 421–424, 2015.

[7]   S. Papaleo, W. H. Zisser, and H. Ceric, “Effects of the Initial Stress at the Bottom of Open TSVs,” in Proc. IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 447–450, 2015.

[8]   S. Papaleo, W. H. Zisser, and H. Ceric, “Stress Analysis in Open TSVs after Nanoindentation,” in Abstracts of the GDRI CNRS Mecano General Meeting on the Mechanics of Nano-Objects, pp. 39–40, 2014.