For a complete simulation and characterization of a modern Very Large Scale Integration (VLSI) technology several hundred simulation steps have to be computed. Furthermore the process steps have different aspects, like geometry manipulations in etching and deposition steps or changes in the doping profiles during implantation and diffusion steps. Grid manipulations can also be necessary between the simulation steps. For these fairly complex tasks the Vienna Integrated System for TCAD Applications (VISTA) [O2,20] was developed.