There are many more or less successful methods in microelectronic engineering to measure distributions of dopants or other species. The most commonly used method is the secondary-ion mass spectrometry (SIMS), which allows to measure the one-dimensional depth distribution of a species. One of the tasks for analytical modeling is now to calculate the characteristic parameters for these profiles and manage them in data-bases for further simulations. As analytical ion implantation is still used since the early 1970s, there are parameter sets available in literature for distributions based on central moments [Kle91] [Rys81] [Jah81] [Hof75b]. Most of the established data are not able to capture dose dependencies of the profiles. By increasing the implantation dose effects like channeling or damage are becoming significant. To apply the analytical ion implantation method for high dose experiments, it is necessary to obtain and tabularize dose dependent data.
As the use of L-moments is not established in semiconductor
modeling, they need to be calculated from experimental data. In practice,
L-moments must usually be estimated from a random sample. Let
be the sample distribution of the ions, where the
value x gives the depth of the located ion, and 
the ordered sample distribution. The L-moment of the
sample 
is defined to be
in particular
We used results from crystalline and amorphous Monte Carlo simulations as reference to extract the L-moments for various ion-target combinations [Ins94].
