In the annealing case there is a diminishing influence of the transient behavior recognized (see Fig. 4.3-6). Due to the increased dopant diffusivity the profiles are determined by the dopant self diffusion and the point defect enhancement. However, there is still significant increase in diffusivity due to point defect enhancement.
A similar trend is exhibited at annealing temperature (see Fig. 4.3-7). At this temperature the enhanced diffusion lasts only a few seconds and the dopant redistributions predicts the final profile. The shoulder of the profile is coincident with the solubility limit and the boron precipitates are completely dissolved. The disagreement of the profiles in the tail regions might be related to the choice of the initial point defect profiles. The experimental profiles suggest some additional enhancement at the slope of the distributions.
Figure 4.3-5: Simulation
results for boron transient enhanced diffusion at for 15min and
4h. Boron concentration above the solid solubility limit is immobile due
to clustering.
The given diffusion model results show good agreement with the experimental data and are able to predict the transient enhanced diffusion effect during furnace as well as RTA annealing. The most effective modeling parameters are the recombination velocity of the point defect concentrations and the interstitial mechansim enhancement factor . Where determines the available amount of point defects above the thermal euqilibrium, specifies the resulting dopant diffusion enhancement.
Figure 4.3-6: Simulation
results for boron at for 30min, 50min and 10h. The influence
of the transient enhancement is diminished due to higher dopant
diffusivity.
Figure 4.3-7: RTA simulation results
for boron transient enhanced diffusion at for 10s and 5min. The
boron aggregates are completely dissolved. Data are taken from
[Cow90a].