D I S S E R T A T I O N

Advanced Process Modeling for VLSI Technology

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften
eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik

von

Helmut Puchner

Hagenmüllergasse 9-19
A-1030 Wien
Matr.-Nr. 8725057
geboren am 03. August 1968 in Steyr

Wien, im Juni 1996

• Kurzfassung
• Abstract
• Acknowledgements
• 1 Introduction
  • 1.1 Simulation Tasks in Process Simulation
    • 1.1.1 Lithography
    • 1.1.2 Etching and Deposition
    • 1.1.3 Ion Implantation
    • 1.1.4 Annealing
    • 1.1.5 Oxidation
  • 1.2 About this Work
• 2 Analytical Ion Implantation
  • 2.1 Statistical Moments and Distributions
    • 2.1.1 Central Moments and their Distribution Functions
    • 2.1.2 Probability Weighted Moments and their Distribution Functions
    • 2.1.3 Evaluation of Statistical Moments from Data Sets
  • 2.2 Two-Dimensional Profiles in Multilayer Structures
    • 2.2.1 Numerical Range Scaling
    • 2.2.2 Convolution Method
  • 2.3 Comparison Analytical - Monte Carlo Simulation Method
• 3 The Diffusion Process in Semiconductor Materials
  • 3.1 Diffusion in Silicon
    • 3.1.1 Intrinsic Point Defects
    • 3.1.2 Sources and Sinks for Point Defects
    • 3.1.3 Intrinsic Dopant Diffusion
    • 3.1.4 Extrinsic Dopant Diffusion
    • 3.1.5 High Concentration Effects
  • 3.2 Diffusion in Polysilicon
    • 3.2.1 Fabrication and Morphology of Polysilicon Layers
    • 3.2.2 Polysilicon Grain Growth
    • 3.2.3 Extrinsic Diffusion
    • 3.2.4 Epitaxial Realignment of Polysilicon
  • 3.3 Diffusion in Oxide and Silicides
• 4 Simulation of Diffusion Processes
  • 4.1 Numerical Solution of the Diffusion Equation
    • 4.1.1 Grid Generation
      • Grid Refinement
    • 4.1.2 Discretization of the PDEs
      • Box-Integration Method
      • Diffusion Current Discretization
      • Time Discretization
      • Boundary conditions
    • 4.1.3 Nonlinear Equation Solution
      • Newton-Iteration Method
    • 4.1.4 The Linear System
      • Pre-elimination
      • Scaling
      • Pre-conditioning
      • Solvers
    • 4.1.5 Transient Integration
  • 4.2 Design of a Diffusion Simulator
    • 4.2.1 Grid Module
    • 4.2.2 Assembling the Diffusion Equation
  • 4.3 Diffusion Model Library
    • 4.3.1 Coupled and Uncoupled Diffusion
      • Model Parameters
    • 4.3.2 Clustering and Precipitation
      • Model Parameters
    • 4.3.3 Transient Enhanced Diffusion
      • Model Parameters
      • Model Verification
    • 4.3.4 Transient Dopant Activation
      • Model Parameters
      • Model Verification
    • 4.3.5 Polysilicon Diffusion
      • Model Parameters
      • Model Verification
  • 4.4 Material Interface Models
    • 4.4.1 Conduction Model
    • 4.4.2 Segregation Model
    • 4.4.3 Poly-/Monosilicon Model
• 5 Applications
  • 5.1 Polysilicon Emitter
  • 5.2 BiCMOS Process Technology
    • 5.2.1 BiCMOS Process Flow
    • 5.2.2 Process Discussion
    • 5.2.3 Simulation Results
• 6 Future Work
• Literatur
• Über dieses Dokument ...