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A dopant reaches an equilibrium state at the material interface when its
chemical potential is the same on each side of the boundary. This
redistribution may result in an abrupt change in the doping concentration
across the material interface. The equilibrium ratio of the dopant
concentrations on each side of the boundary is known as segregation
coefficient m and is given by
The conduction model is the most simplest one. It pins the concentrations on
both sides of the interface to a fixed relation (4.4-3), where k
can be any function of the interface quantities or even a single value
(k;SPMgt;0).
This model is used to convey the concentrations across the boundary without
specifying any underlying exchange mechanism. By specifying k = m, the
dopant segregation at the interface achieves thermal equilibrium.
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