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Model Parameters

  The setup of the initial point defect profile plays a major role. It can be seen from SIMS measurements that no diffusion takes place in the tail region [Aro96]. Hence, we conclude that most of the point defects are generated during implantation near the surface. We used Monte Carlo ion implantation simulations to get the initial concentrations for the interstitial and vacancy profiles. The dopant concentration itself is calculated from a crystalline Monte Carlo calculation. We assume a certain fraction of the implanted dopants to be randomly paired ( tex2html_wrap_inline5477 ) or to be on substitutional lattice sites ( tex2html_wrap_inline5479 ). The values for the equilibrium point defect concentrations tex2html_wrap_inline5289 and tex2html_wrap_inline5291 as well as the point defect diffusivities are taken from [Tan85] [Bro87]. A summary of the parameters for the transient activation model is given in Table 4.3-3.

 

TAM Parameters
P tex2html_wrap_inline5301 tex2html_wrap_inline5303
tex2html_wrap_inline5493 0.037 tex2html_wrap_inline5309 tex2html_wrap_inline5311

PI-pairs

tex2html_wrap_inline5501 0.37 tex2html_wrap_inline5309 tex2html_wrap_inline5311
tex2html_wrap_inline5321 600. tex2html_wrap_inline5309 tex2html_wrap_inline5327

Interstitials

tex2html_wrap_inline5329 600. tex2html_wrap_inline5309 tex2html_wrap_inline5327

[Bro87]

tex2html_wrap_inline5289 tex2html_wrap_inline5339 tex2html_wrap_inline5341 tex2html_wrap_inline5343
tex2html_wrap_inline5345 0.7 tex2html_wrap_inline5309 tex2html_wrap_inline5351

Vacancies

tex2html_wrap_inline5353 0.7 tex2html_wrap_inline5309 tex2html_wrap_inline5351

[Tan85]

tex2html_wrap_inline5291 tex2html_wrap_inline5363 tex2html_wrap_inline5341 tex2html_wrap_inline5351
Recombination velocity tex2html_wrap_inline5557 tex2html_wrap_inline5559 tex2html_wrap_inline5373 2.57eV
Pairing rate tex2html_wrap_inline5565 tex2html_wrap_inline5567 tex2html_wrap_inline5373 7.96eV
Equil. Pairing Const. tex2html_wrap_inline5573 tex2html_wrap_inline5575 tex2html_wrap_inline5577 13.2eV
Activation rate tex2html_wrap_inline5581 tex2html_wrap_inline5583 tex2html_wrap_inline5373 15.7eV
Equil. Activation Const. tex2html_wrap_inline5589 tex2html_wrap_inline5591 tex2html_wrap_inline5577 10.5eV
Initial pairs tex2html_wrap_inline5477 tex2html_wrap_inline5599 -
Initial substitutional Phos. tex2html_wrap_inline5479 tex2html_wrap_inline5603 -
Table 4.3-3: Phosphorus simulation parameters for the transient activation model. Arrhenius law is taken for all parameters tex2html_wrap_inline5389 .

 

next up previous contents
Next: Model Verification Up: 4.3.4 Transient Dopant Activation Previous: 4.3.4 Transient Dopant Activation

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