Next: 3.1.3 Hydrodynamic Model Current
Up: 3.1 The Device Simulator
Previous: 3.1.1 Basic Semiconductor Equations
The current densities
for the carrier
are derived
from the momentum balance of the carrier system. The
approximation for the drift-diffusion (DD) approach reads for
electrons:
and for holes:
|
|
grad![$\displaystyle \bigg(\frac{E_V}{q}-\psi \bigg) -\frac{{\it k}_{\mathrm{B}}}{q} \...
...t {\text{grad}} \bigg( \frac{p \cdot {\it T}_\mathrm{L} }{N_{V,0}}\bigg )\bigg)$](img292.gif) |
(3.5) |
The quantities used in these equations are the conduction and valence band edges
and
, the carrier mobilities
and
,
and the effective carrier densities of states
and
.
Quay
2001-12-21