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Additional process and device simulations were carried out with process data
that varied from the data of the optimized device displayed in
Table 5.1 to determine the sensitivity of the on-resistance
and the maximum electric field on process variations. This is necessary
because variations in the manufacturing process are unavoidable and acceptable
limits for these variations have to be determined.
Especially for the prototypes variations during the repeated mask deposition
and etching process will cause nonideal vertical doping distributions.
Therefore it is important to investigate the effects of these variations on the
performance of the device.
The results of simulations with varying epi-layer thickness and varying width
of the vertical n-doped area are presented in the following.
Martin Rottinger
1999-05-31