Next: 5.1 Electromigration Failure in Open TSVs Up: Dissertation M. Rovitto Previous: 4.3.2 Finite Element Analysis for Electromigration Study
The full electromigration model described in Chapter 3 and the simulation procedure presented in Chapter 4 are employed in order to investigate electromigration failure in three different cases of significant technological interest. The first two cases are related to the reliability assessment of interconnects in 3D integration systems, including a copper-lined open through silicon via (TSV) and a solder bump. The investigations are focused on the identification of the locations in such interconnect structures, where electromigration has the highest probability to lead to the development of failure. These analyses enable to estimate the lifetimes of the interconnects, which are compared to Black's equation in order to determine the most dominant mechanism in electromigration failure. The third case is related to the influence of current crowding and the role of the microstructure of a simple interconnect line on the prediction of the electromigration lifetime.